HL

Hsiang-Lan Lung

MC Macronix International Co.: 310 patents #2 of 1,241Top 1%
IBM: 57 patents #1,416 of 70,183Top 3%
QA Qimonda Ag: 10 patents #32 of 575Top 6%
📍 Ardsley, NY: #1 of 90 inventorsTop 2%
🗺 New York: #51 of 115,490 inventorsTop 1%
Overall (All Time): #1,094 of 4,157,543Top 1%
320
Patents All Time

Issued Patents All Time

Showing 276–300 of 320 patents

Patent #TitleCo-InventorsDate
7385235 Spacer chalcogenide memory device 2008-06-10
7364935 Common word line edge contact phase-change memory 2008-04-29
7323732 MRAM array employing spin-filtering element connected by spin-hold element to MRAM cell structure for enhanced magnetoresistance ChiaHua Ho 2008-01-29
7321130 Thin film fuse phase change RAM and manufacturing method Shih-Hung Chen 2008-01-22
7314815 Manufacturing method of one-time programmable read only memory Chia-Hua Ho, Yen-Hao Shih, Shih-Ping Hong, Shih-Chin Lee 2008-01-01
7279380 Method of forming a chalcogenide memory cell having an ultrasmall cross-sectional area and a chalcogenide memory cell produced by the method 2007-10-09
7251167 Method for programming multi-level nitride read-only memory cells Chao-I Wu 2007-07-31
7247511 Thin film phase-change memory Yi-Chou Chen 2007-07-24
7238994 Thin film plate phase change ram circuit and manufacturing method Shih-Hung Chen 2007-07-03
7220983 Self-aligned small contact phase-change memory method and device 2007-05-22
7209389 Trap read only non-volatile memory (TROM) 2007-04-24
7202493 Chalcogenide memory having a small active region 2007-04-10
7196924 Method of multi-level cell FeRAM Sheng-Chih Lai, Ching-Wei Tsai, Hsueh-Yi Lee 2007-03-27
7158420 Inversion bit line, charge trapping non-volatile memory and method of operating same 2007-01-02
7138687 Thin film phase-change memory Yi-Chou Chen 2006-11-21
7067865 High density chalcogenide memory cells 2006-06-27
7053406 One-time programmable read only memory and manufacturing method thereof ChiaHua Ho, Yen-Hao Shih, Shih-Ping Hong, Shih-Chin Lee 2006-05-30
7038230 Horizontal chalcogenide element defined by a pad for use in solid-state memories Yi-Chou Chen, Ruichen Liu 2006-05-02
7038928 Method of determining optimal voltages for operating two-side non-volatile memory and the operating methods Tzu-Hsuan Hsu, Ming-Hsiu Lee, Chao-I Wu 2006-05-02
7033856 Spacer chalcogenide memory method 2006-04-25
6984548 Method of making a nonvolatile memory programmable by a heat induced chemical reaction Rui-Chen Liu 2006-01-10
6965522 Tunneling diode magnetic junction memory Ruichen Liu 2005-11-15
6960801 High density single transistor ferroelectric non-volatile memory 2005-11-01
6956774 Nonvolatile memory programmable by a heat induced chemical reaction Rui-Chen Liu 2005-10-18
6952038 3D polysilicon ROM and method of fabrication thereof Tzu-Hsuan Hsu, Ming-Hsiu Lee, Chao-I Wu 2005-10-04