AM

Atsushi Murakoshi

KT Kabushiki Kaisha Toshiba: 29 patents #884 of 21,451Top 5%
Toshiba Memory: 9 patents #169 of 1,971Top 9%
Fujitsu Limited: 2 patents #10,930 of 24,456Top 45%
Kioxia: 1 patents #1,054 of 1,813Top 60%
📍 Yokkaichi, JP: #67 of 2,072 inventorsTop 4%
Overall (All Time): #78,540 of 4,157,543Top 2%
40
Patents All Time

Issued Patents All Time

Showing 26–40 of 40 patents

Patent #TitleCo-InventorsDate
6693023 Ion implantation method and ion implantation equipment Kyoichi Suguro 2004-02-17
6646268 Ion generation method and filament for ion generation apparatus Kyoichi Suguro, Katsuya Okumura 2003-11-11
6614033 Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes Kyoichi Suguro, Katsuya Okumura 2003-09-02
6541393 Method for fabricating semiconductor device Taro Sugizaki, Toshiro Nakanishi, Kyoichi Suguro 2003-04-01
6465290 Method of manufacturing a semiconductor device using a polymer film pattern Kyoichi Suguro, Kouji Matsuo, Yasuhiko Sato, Hiromi Niiyama 2002-10-15
6403452 Ion implantation method and ion implantation equipment Kyoichi Suguro 2002-06-11
6376888 Semiconductor device and method of manufacturing the same Yoshitaka Tsunashima, Kyoichi Suguro, Kouji Matsuo, Toshihiko Iinuma 2002-04-23
6335534 Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes Kyoichi Suguro, Katsuya Okumura 2002-01-01
5770512 Semiconductor device Masao Iwase, Kyoichi Suguro, Mitsuo Koike, Tadayuki Asaishi 1998-06-23
5698869 Insulated-gate transistor having narrow-bandgap-source Makoto Yoshimi, Satoshi Inaba, Mamoru Terauchi, Naoyuki Shigyo, Yoshiaki Matsushita +8 more 1997-12-16
5656859 Semiconductor device Masao Iwase, Kyoichi Suguro, Mitsuo Koike, Tadayuki Asaishi 1997-08-12
5656820 Ion generation device, ion irradiation device, and method of manufacturing a semiconductor device Kyoichi Suguro, Tatsuya Hatanaka 1997-08-12
5640020 Ion generation device, ion irradiation device, and method of manufacturing a semiconductor device Kyoichi Suguro, Tatsuya Hatanaka 1997-06-17
5598025 Semiconductor device comprises an impurity layer having boron ions in the form of clusters of icosahedron structure Ichiro Mizushima, Masaharu Watanabe, Masahiko Yoshiki 1997-01-28
5413943 Semiconductor device and method of manufacturing the same Ichiro Mizushima, Masaharu Watanabe, Masahiko Yoshiki 1995-05-09