Issued Patents All Time
Showing 126–150 of 168 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5272365 | Silicon transistor device with silicon-germanium electron gas hetero structure channel | — | 1993-12-21 |
| 5241210 | High breakdown voltage semiconductor device | Norio Yasuhara | 1993-08-31 |
| 5237186 | Conductivity-modulation metal oxide field effect transistor with single gate structure | Yoshihiro Yamaguchi, Kiminori Watanabe | 1993-08-17 |
| 5212396 | Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations | Hiromichi Ohashi | 1993-05-18 |
| 5210432 | Insulated gate GTO thyristor | Takashi Shinohe, Masaki Atsuta | 1993-05-11 |
| 5168333 | Conductivity-modulation metal oxide semiconductor field effect transistor | Yoshihiro Yamaguchi, Kiminori Watanabe | 1992-12-01 |
| 5162876 | Semiconductor device having high breakdown voltage | Mitsuhiko Kitagawa | 1992-11-10 |
| 5159427 | Semiconductor substrate structure for use in power IC device | Tsuneo Ogura | 1992-10-27 |
| 5144401 | Turn-on/off driving technique for insulated gate thyristor | Tsuneo Ogura | 1992-09-01 |
| 5124773 | Conductivity-modulation metal oxide semiconductor field effect transistor | Yoshihiro Yamaguchi, Kiminori Watanabe | 1992-06-23 |
| 5105243 | Conductivity-modulation metal oxide field effect transistor with single gate structure | Yoshihiro Yamaguchi, Kiminori Watanabe | 1992-04-14 |
| 5103415 | Computer-simulation technique for numerical analysis of semiconductor devices | Ichiro Omura, Shin Nakamura | 1992-04-07 |
| 5097314 | Dielectrically isolated substrate with isolated high and low breakdown voltage elements | Kazuyoshi Furukawa, Tsuneo Ogura, Katsujiro Tanzawa | 1992-03-17 |
| 5093701 | Conductivity modulated MOSFET | Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi | 1992-03-03 |
| 5086323 | Conductivity modulated MOSFET | Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi | 1992-02-04 |
| 5086332 | Planar semiconductor device having high breakdown voltage | Kiminori Watanabe, Yutaka Koshino, Yoshihiro Yamaguchi, Yoshiro Baba | 1992-02-04 |
| 5072287 | Semiconductor device and method of manufacturing the same | Kazuyoshi Furukawa, Tsuneo Ogura | 1991-12-10 |
| 5068700 | Lateral conductivity modulated MOSFET | Yoshihiro Yamaguchi, Kiminori Watanabe | 1991-11-26 |
| 5068704 | Method of manufacturing semiconductor device | Kaoru Imamura, Ryo Sato, Tadahide Hoshi | 1991-11-26 |
| 5049968 | Dielectrically isolated substrate and semiconductor device using the same | Kazuyoshi Furukawa, Tsuneo Ogura, Katsujiro Tanzawa | 1991-09-17 |
| 4994696 | Turn-on/off driving technique for insulated gate thyristor | Tsuneo Ogura | 1991-02-19 |
| 4994904 | MOSFET having drain voltage detection function | Yoshihiro Yamaguchi | 1991-02-19 |
| 4980743 | Conductivity-modulation metal oxide semiconductor field effect transistor | Yoshihiro Yamaguchi, Kiminori Watanabe | 1990-12-25 |
| 4963972 | Gate turn-off thyristor with switching control field effect transistor | Takashi Shinohe | 1990-10-16 |
| 4959703 | Turn-on/off driving technique for insulated gate thyristor | Tsuneo Ogura | 1990-09-25 |