Issued Patents All Time
Showing 76–100 of 168 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6150702 | Lateral high-voltage semiconductor device having an outwardly extended electrode | Hideyuki Funaki, Fumito Suzuki | 2000-11-21 |
| 6133607 | Semiconductor device | Hideyuki Funaki | 2000-10-17 |
| 6133617 | High breakdown voltage semiconductor device | Keizo Hirayama, Hideyuki Funaki, Fumito Suzuki | 2000-10-17 |
| 6118149 | Trench gate MOSFET | Yusuke Kawaguchi | 2000-09-12 |
| 6064086 | Semiconductor device having lateral IGBT | Tomoko Matsudai, Hideyuki Funaki, Norio Yasuhara | 2000-05-16 |
| 6049109 | Silicon on Insulator semiconductor device with increased withstand voltage | Ichiro Omura | 2000-04-11 |
| 6025622 | Conductivity modulated MOSFET | Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi | 2000-02-15 |
| 5997142 | Eye test method using red and green marks and red/green tester used in the eye test method | — | 1999-12-07 |
| 5994740 | Semiconductor device | Yoshihiro Yamaguchi, Tomoko Matsudai | 1999-11-30 |
| 5994739 | Integrated circuit device | Tsuneo Ogura | 1999-11-30 |
| 5985708 | Method of manufacturing vertical power device | Naoharu Sugiyama, Tomoko Matsudai, Norio Yasuhara, Atsusi Kurobe, Hideyuki Funaki +2 more | 1999-11-16 |
| 5982015 | High breakdown voltage semiconductor device | Keizo Hirayama, Hideyuki Funaki, Fumito Suzuki | 1999-11-09 |
| 5932897 | High-breakdown-voltage semiconductor device | Yusuke Kawaguchi, Kozo Kinoshita | 1999-08-03 |
| 5920087 | Lateral IGBT | Tomoko Matsudai, Hideyuki Funaki | 1999-07-06 |
| 5894164 | High voltage semiconductor device | Hideyuki Funaki, Norio Yasuhara, Yoshinori Terazaki | 1999-04-13 |
| 5838026 | Insulated-gate semiconductor device | Mitsuhiko Kitagawa, Ichiro Omura, Norio Yasuhara, Tomoki Inoue | 1998-11-17 |
| 5796125 | High breakdown voltage semiconductor device using trench grooves | Tomoko Matsudai, Mitsuhiko Kitagawa | 1998-08-18 |
| 5793065 | Insulated-gate thyristor | Takashi Shinohe, Kazuya Nakayama, Minami Takeuchi, Masakazu Yamaguchi, Mitsuhiko Kitagawa +1 more | 1998-08-11 |
| 5780887 | Conductivity modulated MOSFET | Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi | 1998-07-14 |
| 5751022 | Thyristor | Norio Yasuhara, Tomoko Matsudai, Hideyuki Funaki | 1998-05-12 |
| 5731603 | Lateral IGBT | Tomoko Matsudai, Hideyuki Funaki | 1998-03-24 |
| 5714782 | Composite integrated circuit device | Tsuneo Ogura | 1998-02-03 |
| 5708287 | Power semiconductor device having an active layer | Yoshihiro Yamaguchi, Tomoko Matsudai | 1998-01-13 |
| 5688702 | Process of making a semiconductor device using a silicon-on-insulator substrate | Kazuyoshi Furukawa, Tsuneo Ogura, Katsujiro Tanzawa | 1997-11-18 |
| 5689121 | Insulated-gate semiconductor device | Mitsuhiko Kitagawa, Ichiro Omura, Norio Yasuhara, Tomoki Inoue | 1997-11-18 |