Issued Patents All Time
Showing 26–50 of 168 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7663186 | Semiconductor device | Syotaro Ono, Yoshihiro Yamaguchi, Yusuke Kawaguchi, Kazutoshi Nakamura, Norio Yasuhara +2 more | 2010-02-16 |
| 7633153 | Semiconductor module | Kazuo Shimokawa, Takashi Koyanagawa, Masako Ooishi, Tatsuya Yamada, Osamu Usuda +13 more | 2009-12-15 |
| 7579669 | Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof | Kazutoshi Nakamura, Norio Yasuhara, Tomoko Matsudai, Kenichi Matsushita | 2009-08-25 |
| 7564097 | Trench-gated MOSFET including schottky diode therein | Syotaro Ono, Yusuke Kawaguchi, Yoshihiro Yamaguchi | 2009-07-21 |
| 7557545 | Electric power unit operating in continuous and discontinuous conduction modes and control method therefor | Toshiyuki Naka, Kazutoshi Nakamura | 2009-07-07 |
| 7514783 | Semiconductor module | Kazuo Shimokawa, Takashi Koyanagawa, Masako Ooishi, Tatsuya Yamada, Osamu Usuda +13 more | 2009-04-07 |
| 7503654 | Pupil reaction ascertaining device and fatigue recovery promoting device | — | 2009-03-17 |
| 7432579 | Semiconductor device with horizontal MOSFET and Schottky barrier diode provided on single substrate | Tomoko Matsudai, Kazutoshi Nakamura | 2008-10-07 |
| 7358566 | Semiconductor device | — | 2008-04-15 |
| 7230297 | Trench-gated MOSFET including schottky diode therein | Syotaro Ono, Yusuke Kawaguchi, Yoshihiro Yamaguchi | 2007-06-12 |
| 7227225 | Semiconductor device having a vertical MOS trench gate structure | Syotaro Ono, Yusuke Kawaguchi | 2007-06-05 |
| 7138698 | Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof | Kazutoshi Nakamura, Norio Yasuhara, Tomoko Matsudai, Kenichi Matsushita | 2006-11-21 |
| 7115946 | MOS transistor having an offset region | Yusuke Kawaguchi, Kazutoshi Nakamura | 2006-10-03 |
| 7061048 | Power MOSFET device | Yusuke Kawaguchi, Norio Yasuhara, Syotaro Ono, Shinichi Hodama | 2006-06-13 |
| 7061060 | Offset-gate-type semiconductor device | Norio Yasuhara, Syotaro Ono, Kazutoshi Nakamura, Yusuke Kawaguchi, Shinichi Hodama | 2006-06-13 |
| 7061047 | Semiconductor device having trench gate structure and manufacturing method thereof | Syotaro Ono, Yusuke Kawaguchi | 2006-06-13 |
| 7034357 | Insulated gate semiconductor device | Tomoko Matsudai | 2006-04-25 |
| 7026214 | Offset-gate-type semiconductor device | Norio Yasuhara, Syotaro Ono, Kazutoshi Nakamura, Yusuke Kawaguchi, Shinichi Hodama | 2006-04-11 |
| 6977414 | Semiconductor device | Kazutoshi Nakamura, Yoshihiro Yamaguchi, Yusuke Kawaguchi, Syotaro Ono | 2005-12-20 |
| RE38907 | Semiconductor device | Tomoko Matsudai, Tsutomu Kojima | 2005-12-06 |
| 6914294 | Semiconductor device | Kazutoshi Nakamura, Tomoko Matsudai, Yusuke Kawaguchi | 2005-07-05 |
| 6879005 | High withstand voltage semiconductor device | Yoshihiro Yamaguchi | 2005-04-12 |
| 6878992 | Vertical-type power MOSFET with a gate formed in a trench | Yusuke Kawaguchi, Norio Yasuhara, Kazutoshi Nakamura, Syotaro Ono | 2005-04-12 |
| 6864533 | MOS field effect transistor with reduced on-resistance | Norio Yasuhara, Yusuke Kawaguchi, Kazutoshi Nakamura | 2005-03-08 |
| 6838730 | Semiconductor device | Yusuke Kawaguchi, Syotaro Ono, Yoshihiro Yamaguchi | 2005-01-04 |