Issued Patents All Time
Showing 51–75 of 168 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6818945 | Semiconductor device | Yusuke Kawaguchi, Syotaro Ono | 2004-11-16 |
| 6740830 | Trigger switch | Takashi Sato, Tetsuzo Nakazawa, Takaki Tsutsui | 2004-05-25 |
| 6720618 | Power MOSFET device | Yusuke Kawaguchi, Norio Yasuhara, Syotaro Ono, Shinichi Hodama | 2004-04-13 |
| 6705574 | Cable mounting structure | Tetsuzo Nakazawa, Takashi Sato, Takaki Tsutsui | 2004-03-16 |
| 6690085 | High-voltage semiconductor device used as switching element or the like | Yusuke Kawaguchi | 2004-02-10 |
| 6686613 | Punch through type power device | Tomoko Matsudai, Hidetaka Hattori | 2004-02-03 |
| 6683343 | High voltage semiconductor device having two buffer layer | Tomoko Matsudai | 2004-01-27 |
| 6664591 | Insulated gate semiconductor device | Tomoko Matsudai | 2003-12-16 |
| 6657147 | Key switch | Takaki Tsutsui, Tetsuzou Nakazawa, Takashi Satou | 2003-12-02 |
| 6620653 | Semiconductor device and method of manufacturing the same | Tomoko Matsudai, Hidetaka Hattori | 2003-09-16 |
| 6617641 | High voltage semiconductor device capable of increasing a switching speed | Tomoko Matsudai | 2003-09-09 |
| 6614089 | Field effect transistor | Kazutoshi Nakamura, Yusuke Kawaguchi | 2003-09-02 |
| 6614077 | Semiconductor device improved in ESD reliability | Kazutoshi Nakamura, Yusuke Kawaguchi | 2003-09-02 |
| 6605844 | Semiconductor device | Kazutoshi Nakamura, Yusuke Kawaguchi | 2003-08-12 |
| 6563193 | Semiconductor device | Yusuke Kawaguchi, Kazutoshi Nakamura, Tomoko Matsudai, Hirofumi Nagano | 2003-05-13 |
| 6552389 | Offset-gate-type semiconductor device | Norio Yasuhara, Syotaro Ono, Kazutoshi Nakamura, Yusuke Kawaguchi, Shinichi Hodama | 2003-04-22 |
| 6469346 | High-breakdown-voltage semiconductor device | Yusuke Kawaguchi, Kozo Kinoshita | 2002-10-22 |
| 6452231 | Semiconductor device | Yusuke Kawaguchi | 2002-09-17 |
| 6411133 | Semiconductor device | Tomoko Matsudai, Tsutomu Kojima | 2002-06-25 |
| 6380566 | Semiconductor device having FET structure with high breakdown voltage | Tomoko Matsudai, Yusuke Kawaguchi, Kazutoshi Nakamura, Hirofumi Nagano | 2002-04-30 |
| 6297534 | Power semiconductor device | Yusuke Kawaguchi, Kazutoshi Nakamura | 2001-10-02 |
| 6259136 | High-breakdown-voltage semiconductor device | Yusuke Kawaguchi, Kozo Kinoshita | 2001-07-10 |
| 6236069 | Insulated-gate thyristor | Takashi Shinohe, Kazuya Nakayama, Minami Takeuchi, Masakazu Yamaguchi, Mitsuhiko Kitagawa +1 more | 2001-05-22 |
| 6211549 | High breakdown voltage semiconductor device including first and second semiconductor elements | Hideyuki Funaki | 2001-04-03 |
| 6163051 | High breakdown voltage semiconductor device | Tomoko Matsudai, Hideyuki Funaki, Norio Yasuhara | 2000-12-19 |