AN

Akio Nakagawa

KT Kabushiki Kaisha Toshiba: 144 patents #36 of 21,451Top 1%
FC Fuji Electric Co.: 7 patents #338 of 2,643Top 15%
Canon: 5 patents #9,253 of 19,416Top 50%
DE Denso: 4 patents #3,129 of 11,792Top 30%
MC Mitsumi Electric Co.: 3 patents #259 of 935Top 30%
TO Toshiba: 1 patents #1,121 of 2,688Top 45%
TE Tokyo Shibaura Electric: 1 patents #96 of 337Top 30%
Fujitsu Limited: 1 patents #14,843 of 24,456Top 65%
📍 Yokohama, MA: #3 of 47 inventorsTop 7%
Overall (All Time): #4,894 of 4,157,543Top 1%
168
Patents All Time

Issued Patents All Time

Showing 151–168 of 168 patents

Patent #TitleCo-InventorsDate
4935386 Method of manufacturing semiconductor device including substrate bonding and outdiffusion by thermal heating Kaoru Imamura, Ryo Sato, Tadahide Hoshi 1990-06-19
4928155 Lateral conductivity modulated MOSFET Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi 1990-05-22
4914496 Gate turn-off thyristor with independent turn-on/off controlling transistors Takashi Shinohe 1990-04-03
4881120 Conductive modulated MOSFET Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi 1989-11-14
4878957 Dielectrically isolated semiconductor substrate Yoshihiro Yamaguchi, Kiminori Watanabe, Kazuyoshi Furukama, Kiyoshi Fukuda, Katsujiro Tanzawa 1989-11-07
4866315 Turn-on/off driving technique for insulated gate thyristor Tsuneo Ogura 1989-09-12
4821083 Thyristor drive system Tsuneo Ogura, Katsuhiko Takigami, Tomokazu Domon 1989-04-11
RE32784 Conductivity modulated MOS transistor device Kiminori Watanabe 1988-11-15
4782372 Lateral conductivity modulated MOSFET Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi 1988-11-01
4760431 Gate turn-off thyristor with independent turn-on/off controlling transistors Takashi Shinohe 1988-07-26
4719531 Overcurrent protective circuit for modulated-conductivity type MOSFET Chihiro Okado, Yoshihiro Yamaguchi 1988-01-12
4717940 MIS controlled gate turn-off thyristor Takashi Shinohe, Katsuhiko Takigami, Hiromichi Ohashi 1988-01-05
4700466 Method of manufacturing semiconductor device wherein silicon substrates are bonded together Hiromichi Ohashi, Tsuneo Ogura, Masaru Shimbo 1987-10-20
4689647 Conductivity modulated field effect switch with optimized anode emitter and anode base impurity concentrations Hiromichi Ohashi 1987-08-25
4680604 Conductivity modulated MOS transistor device Kiminori Watanabe 1987-07-14
4672407 Conductivity modulated MOSFET Hiromichi Ohashi, Yoshihiro Yamaguchi, Kiminori Watanabe, Thuneo Thukakoshi 1987-06-09
4567502 Planar type semiconductor device with a high breakdown voltage Tadashi Utagawa, Tsuneo Tsukakoshi 1986-01-28
4243999 Gate turn-off thyristor Makoto Azuma 1981-01-06