Issued Patents All Time
Showing 1–25 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12125701 | Large dimension silicon carbide single crystalline materials with reduced crystallographic stress | Yuri Khlebnikov, Varad R. Sakhalkar, Caleb A. Kent, Michael James Paisley, Oleksandr Kramarenko +12 more | 2024-10-22 |
| 12054850 | Large diameter silicon carbide wafers | Yuri Khlebnikov, Varad R. Sakhalkar, Caleb A. Kent, Michael James Paisley, Oleksandr Kramarenko +8 more | 2024-08-06 |
| 12024794 | Reduced optical absorption for silicon carbide crystalline materials | Robert Tyler Leonard, Elif Balkas, Yuri Khlebnikov, Kathryn A. O'Hara, Simon Bubel +1 more | 2024-07-02 |
| 11519098 | Dislocation distribution for silicon carbide crystalline materials | Yuri Khlebnikov, Robert Tyler Leonard, Elif Balkas, Steven Griffiths, Michael James Paisley | 2022-12-06 |
| 9790619 | Method of producing high quality silicon carbide crystal in a seeded growth system | Robert Tyler Leonard, Adrian Powell | 2017-10-17 |
| 9200381 | Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface | Robert Tyler Leonard, Adrian Powell | 2015-12-01 |
| 9059118 | Method for producing semi-insulating resistivity in high purity silicon carbide crystals | Jason Jenny, David Phillip Malta, Hudson M. Hobgood, Stephan Mueller | 2015-06-16 |
| 8785946 | Low 1C screw dislocation 3 inch silicon carbide wafer | Adrian Powell, Mark Brady, Stephan Mueller, Robert Tyler Leonard | 2014-07-22 |
| 8618553 | Process for producing silicon carbide crystals having increased minority carrier lifetimes | Calvin H. Carter, Jr., Jason Jenny, David Phillip Malta, Hudson M. Hobgood, Mrinal K. Das | 2013-12-31 |
| 8384090 | Low 1C screw dislocation 3 inch silicon carbide wafer | Adrian Powell, Mark Brady, Stephan Mueller, Robert Tyler Leonard | 2013-02-26 |
| 8163086 | Halogen assisted physical vapor transport method for silicon carbide growth | Stephan Mueller, Hudson M. Hobgood | 2012-04-24 |
| 8147991 | One hundred millimeter single crystal silicon carbide wafer | Jason Jenny, David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Mark Brady +2 more | 2012-04-03 |
| 7943954 | LED fabrication via ion implant isolation | Yifeng Wu, Gerald H. Negley, David B. Slater, Jr., Alexander Suvorov | 2011-05-17 |
| 7811943 | Process for producing silicon carbide crystals having increased minority carrier lifetimes | Calvin H. Carter, Jr., Jason Jenny, David Phillip Malta, Hudson M. Hobgood, Mrinal K. Das | 2010-10-12 |
| 7592634 | LED fabrication via ion implant isolation | Yifeng Wu, Gerald H. Negley, David B. Slater, Jr., Alexander Suvorov | 2009-09-22 |
| 7563321 | Process for producing high quality large size silicon carbide crystals | Adrian Powell, Mark Brady, Robert Tyler Leonard | 2009-07-21 |
| 7387680 | Method and apparatus for the production of silicon carbide crystals | David Phillip Malta | 2008-06-17 |
| 7364617 | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals | Stephan Mueller, Adrian Powell | 2008-04-29 |
| 7351286 | One hundred millimeter single crystal silicon carbide wafer | Robert Tyler Leonard, Adrian Powell, Stephan Mueller | 2008-04-01 |
| 7338822 | LED fabrication via ion implant isolation | Yifeng Wu, Gerald H. Negley, David B. Slater, Jr., Alexander Suvorov | 2008-03-04 |
| 7323052 | Apparatus and method for the production of bulk silicon carbide single crystals | David Phillip Malta, Jason Jenny | 2008-01-29 |
| 7323051 | One hundred millimeter single crystal silicon carbide wafer | Hudson M. Hobgood, Jason Jenny, David Phillip Malta, Calvin H. Carter, Jr., Robert Tyler Leonard +1 more | 2008-01-29 |
| 7316747 | Seeded single crystal silicon carbide growth and resulting crystals | Jason Jenny, David Phillip Malta, Hudson M. Hobgood, Stephan Mueller, Mark Brady +4 more | 2008-01-08 |
| 7314520 | Low 1c screw dislocation 3 inch silicon carbide wafer | Adrian Powell, Mark Brady, Stephen G. Mueller, Robert Tyler Leonard | 2008-01-01 |
| 7300519 | Reduction of subsurface damage in the production of bulk SiC crystals | Adrian Powell, Stephan Mueller | 2007-11-27 |