TF

Thomas Feil

IA Infineon Technologies Austria Ag: 20 patents #51 of 1,126Top 5%
Infineon Technologies Ag: 3 patents #2,452 of 7,486Top 35%
Overall (All Time): #179,501 of 4,157,543Top 5%
23
Patents All Time

Issued Patents All Time

Showing 1–23 of 23 patents

Patent #TitleCo-InventorsDate
12433013 Semiconductor die with a vertical transistor device 2025-09-30
12389658 Semiconductor die with a transistor device and method of manufacturing the same 2025-08-12
12087717 Semiconductor package and methods of manufacturing a semiconductor package Danny Clavette, Paul Ganitzer, Martin Poelzl, Carsten von Koblinski 2024-09-10
11908904 Planar gate semiconductor device with oxygen-doped Si-layers Sylvain Leomant, Yulia Polak, Maximilian Roesch 2024-02-20
11848237 Composite wafer, semiconductor device and electronic component Paul Ganitzer, Carsten von Koblinski, Gerald Lackner, Jochen Mueller, Martin Poelzl +1 more 2023-12-19
11581409 Transistor device with a field electrode that includes two layers 2023-02-14
11417732 Semiconductor transistor device and method of manufacturing the same 2022-08-16
11302579 Composite wafer, semiconductor device and electronic component Paul Ganitzer, Carsten von Koblinski, Gerald Lackner, Jochen Mueller, Martin Poelzl +1 more 2022-04-12
11158627 Electronic circuit with a transistor device and a clamping circuit Gerhard Noebauer 2021-10-26
11081457 Semiconductor package and methods of manufacturing a semiconductor package Danny Clavette, Paul Ganitzer, Martin Poelzl, Carsten von Koblinski 2021-08-03
11069639 Semiconductor module, electronic component and method of manufacturing a semiconductor module Danny Clavette, Carsten von Koblinski 2021-07-20
11031478 Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture Wei Huang, Martin Poelzl, Maximilian Roesch 2021-06-08
10957771 Transistor device with a field electrode that includes two layers 2021-03-23
10868172 Vertical power devices with oxygen inserted Si-layers Oliver Blank, Maximilian Roesch, Martin Poelzl, Robert Haase, Sylvain Leomant +2 more 2020-12-15
10861966 Vertical trench power devices with oxygen inserted Si-layers Robert Haase, Martin Poelzl, Maximilian Roesch, Sylvain Leomant, Bernhard Goller +1 more 2020-12-08
10720500 Transistor device with a field electrode that includes two layers 2020-07-21
10672664 Composite wafer, semiconductor device, electronic component and method of manufacturing a semiconductor device Paul Ganitzer, Carsten von Koblinski, Gerald Lackner, Jochen Mueller, Martin Poelzl +1 more 2020-06-02
10580888 Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices Oliver Blank, Maximilian Roesch, Martin Poelzl, Robert Haase, Sylvain Leomant +2 more 2020-03-03
10573742 Oxygen inserted Si-layers in vertical trench power devices Robert Haase, Martin Poelzl, Maximilian Roesch, Sylvain Leomant, Bernhard Goller +1 more 2020-02-25
10529845 Semiconductor device Ashita Mirchandani, Maximilian Roesch, Britta Wutte 2020-01-07
10529811 Power semiconductor device having a trench with control and field electrode structures Michael Hutzler 2020-01-07
10243051 Transistor device with a field electrode that includes two layers 2019-03-26
10236351 Power semiconductor device trench having field plate and gate electrode Michael Hutzler 2019-03-19