Issued Patents All Time
Showing 25 most recent of 68 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12336299 | Electrostatic discharge guard ring with snapback protection | Sunglyong Kim, David LaFonteese, Sameer Pendharkar | 2025-06-17 |
| 12094970 | Electrostatic discharge guard ring with complementary drain extended devices | Sunglyong Kim, Sameer Pendharkar, David LaFonteese | 2024-09-17 |
| 11791198 | Trench shield isolation layer | Hong-Seon Yang, Ya-Ping Chen, Fei Ma, Yunlong Liu, Sunglyong Kim | 2023-10-17 |
| 11764208 | Electrostatic discharge guard ring with snapback protection | Sunglyong Kim, David LaFonteese, Sameer Pendharkar | 2023-09-19 |
| 11658241 | Vertical trench gate MOSFET with integrated Schottky diode | Sunglyong Kim, Hong-Seon Yang, Ya-Ping Chen, Thomas E. Grebs | 2023-05-23 |
| 11456381 | Drain-extended transistor | Meng-Chia Lee, Sunglyong Kim, Sameer Pendharkar | 2022-09-27 |
| 11322610 | High voltage lateral junction diode device | Sunglyong Kim, Sameer Pendharkar | 2022-05-03 |
| 11322594 | Semiconductor device including a lateral insulator | Fei Ma, Ya-Ping Chen, Yunlong Liu, Hong-Seon Yang, Shengpin Yang +4 more | 2022-05-03 |
| 11302568 | Trench shield isolation layer | Hong-Seon Yang, Ya-Ping Chen, Fei Ma, Yunlong Liu, Sunglyong Kim | 2022-04-12 |
| 11239318 | High-voltage drain expended MOS transistor | Sunglyong Kim, Sameer Pendharkar | 2022-02-01 |
| 11195915 | Semiconductor devices with a sloped surface | Haian Lin, Frank Baiocchi | 2021-12-07 |
| 11127852 | Vertical trench gate MOSFET with deep well region for junction termination | Sunglyong Kim, Hong-Seon Yang, Ya-Ping Chen, Yunlong Liu, Fei Ma | 2021-09-21 |
| 10950720 | Electrostatic discharge guard ring with complementary drain extended devices | Sunglyong Kim, Sameer Pendharkar, David LaFonteese | 2021-03-16 |
| 10936000 | Multi-mode high voltage circuit | Michael Ryan Hanschke, Filippo Marino, Sunglyong Kim, Tobin Hagan, Richard Lee Valley +2 more | 2021-03-02 |
| 10896904 | ESD guard ring with snapback protection and lateral buried layers | Sunglyong Kim, David LaFonteese, Sameer Pendharkar | 2021-01-19 |
| 10840241 | Resistor divider with improved resistor matching | Sunglyong Kim, Richard Lee Valley, Tobin Hagan, Michael Ryan Hanschke | 2020-11-17 |
| 10720499 | Semiconductor device having polysilicon field plate for power MOSFETs | Ya-Ping Chen, Hong-Seon Yang, Peng Li, Yunlong Liu, Rui Liu | 2020-07-21 |
| 10714474 | High voltage CMOS with triple gate oxide | Binghua Hu, Pinghai Hao, Sameer Pendharkar, Jarvis Benjamin Jacobs | 2020-07-14 |
| 10672901 | Power transistor with terminal trenches in terminal resurf regions | Hideaki Kawahara, Christopher Boguslaw Kocon, Satoshi Suzuki, Simon John Molloy | 2020-06-02 |
| 10651274 | High-voltage drain extended MOS transistor | Sunglyong Kim, Sameer Pendharkar | 2020-05-12 |
| 10601422 | Integrated high-side driver for P-N bimodal power device | Yongxi Zhang, Sameer Pendharkar, Philip L. Hower, Salvatore Giombanco, Filippo Marino | 2020-03-24 |
| 10593795 | Scheme to align LDMOS drain extension to moat | — | 2020-03-17 |
| 10573553 | Semiconductor product and fabrication process | Hong-Seon Yang, Abbas Ali, Yaping Chen, Chao Zuo, Yunlong Liu | 2020-02-25 |
| 10559681 | High voltage lateral junction diode device | Sunglyong Kim, Sameer Pendharkar | 2020-02-11 |
| 10541326 | Multiple shielding trench gate FET | Hideaki Kawahara, Christopher Boguslaw Kocon, Simon John Molloy, Hong-Seon Yang | 2020-01-21 |