Issued Patents All Time
Showing 25 most recent of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11316028 | Nitride-based transistors with a protective layer and a low-damage recess | Scott Sheppard, Zoltan Ring | 2022-04-26 |
| 9666707 | Nitride-based transistors with a cap layer and a recessed gate | Scott Sheppard | 2017-05-30 |
| 9224596 | Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers | Adam William Saxler, Yifeng Wu, Primit Parikh, Umesh Mishra, Scott Sheppard | 2015-12-29 |
| 9166033 | Methods of passivating surfaces of wide bandgap semiconductor devices | Adam William Saxler, Scott Sheppard | 2015-10-20 |
| 9142636 | Methods of fabricating nitride-based transistors with an ETCH stop layer | Scott Sheppard, Andrew Mackenzie, Scott Allen | 2015-09-22 |
| 8946777 | Nitride-based transistors having laterally grown active region and methods of fabricating same | Adam William Saxler, Scott Sheppard | 2015-02-03 |
| 8803198 | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions | Scott Sheppard, Adam William Saxler, Yifeng Wu | 2014-08-12 |
| 8575651 | Devices having thick semi-insulating epitaxial gallium nitride layer | Adam William Saxler, Yifeng Wu, Primit Parikh, Umesh Mishra, Scott Sheppard | 2013-11-05 |
| 8212289 | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions | Scott Sheppard, Adam William Saxler, Yifeng Wu | 2012-07-03 |
| 8049252 | Methods of fabricating transistors including dielectrically-supported gate electrodes and related devices | Scott Sheppard | 2011-11-01 |
| 7906799 | Nitride-based transistors with a protective layer and a low-damage recess | Scott Sheppard, Zoltan Ring | 2011-03-15 |
| 7858460 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides | Zoltan Ring, Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Allen +3 more | 2010-12-28 |
| 7855401 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides | Scott Sheppard, Zoltan Ring | 2010-12-21 |
| 7709859 | Cap layers including aluminum nitride for nitride-based transistors | Adam William Saxler, Scott Sheppard | 2010-05-04 |
| 7709269 | Methods of fabricating transistors including dielectrically-supported gate electrodes | Scott Sheppard | 2010-05-04 |
| 7678628 | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate | Scott Sheppard | 2010-03-16 |
| 7550784 | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses | Adam William Saxler, Scott Sheppard | 2009-06-23 |
| 7525122 | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides | Zoltan Ring, Helmut Hagleitner, Jason Henning, Andrew Mackenzie, Scott Allen +3 more | 2009-04-28 |
| 7465967 | Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions | Scott Sheppard, Adam William Saxler, Yifeng Wu | 2008-12-16 |
| 7456443 | Transistors having buried n-type and p-type regions beneath the source region | Adam William Saxler, Scott Sheppard | 2008-11-25 |
| 7432142 | Methods of fabricating nitride-based transistors having regrown ohmic contact regions | Adam William Saxler | 2008-10-07 |
| 7332795 | Dielectric passivation for semiconductor devices | Scott Sheppard, John Williams Palmour | 2008-02-19 |
| 7238560 | Methods of fabricating nitride-based transistors with a cap layer and a recessed gate | Scott Sheppard | 2007-07-03 |
| 7045404 | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof | Scott Sheppard, Zoltan Ring | 2006-05-16 |
| 6982204 | Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses | Adam William Saxler, Scott Sheppard | 2006-01-03 |