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Template for growing a crystal of a two-dimensional material |
Yuanyuan Shi, Benjamin Groven, Vladislav Voronenkov |
2025-09-30 |
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Chip containing an onboard non-volatile memory comprising a phase-change material |
Franck Arnaud, David Galpin, Stephane Zoll, Olivier Hinsinger, Laurent Favennec +5 more |
2025-02-18 |
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| 12211936 |
Strained-channel fin FETs |
Nicolas Loubet |
2025-01-28 |
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| 12191309 |
Method to induce strain in finFET channels from an adjacent region |
Nicolas Loubet |
2025-01-07 |
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| 11948943 |
Method to induce strain in FINFET channels from an adjacent region |
Nicolas Loubet |
2024-04-02 |
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| 11854803 |
Gate spacer patterning |
Boon Teik Chan, Antony Premkumar Peter |
2023-12-26 |
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| 11688811 |
Transistor comprising a channel placed under shear strain and fabrication process |
Emmanuel Augendre, Maxime Argoud, Sylvain Maitrejean, Raluca Tiron |
2023-06-27 |
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| 11653582 |
Chip containing an onboard non-volatile memory comprising a phase-change material |
Franck Arnaud, David Galpin, Stephane Zoll, Olivier Hinsinger, Laurent Favennec +5 more |
2023-05-16 |
$29,428,000 |
| 11587928 |
Method to induce strain in finFET channels from an adjacent region |
Nicolas Loubet |
2023-02-21 |
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| 11569384 |
Method to induce strain in 3-D microfabricated structures |
Nicolas Loubet |
2023-01-31 |
$67,221,000 |
| 11302812 |
Semiconductor device with fin and related methods |
Nicolas Loubet |
2022-04-12 |
$26,568,000 |
| 11264286 |
Co-integration of tensile silicon and compressive silicon germanium |
Nicolas Loubet, Yann Mignot |
2022-03-01 |
$20,861,000 |
| 11133331 |
Integrated tensile strained silicon NFET and compressive strained silicon-germanium PFET implemented in FinFET technology |
Qing Liu |
2021-09-28 |
$30,299,000 |
| 10978594 |
Transistor comprising a channel placed under shear strain and fabrication process |
Emmanuel Augendre, Maxime Argoud, Sylvain Maitrejean, Raluca Tiron |
2021-04-13 |
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| 10903423 |
Phase change memory |
Michel Haond, Paola Zuliani |
2021-01-26 |
$23,954,000 |
| 10854606 |
Method to induce strain in finFET channels from an adjacent region |
Nicolas Loubet |
2020-12-01 |
$40,707,000 |
| 10854750 |
Semiconductor device with fin and related methods |
Nicolas Loubet |
2020-12-01 |
$40,707,000 |
| 10847654 |
Method to induce strain in 3-D microfabricated structures |
Nicolas Loubet |
2020-11-24 |
$37,546,000 |
| 10665497 |
Method of manufacturing a structure having one or several strained semiconducting zones that may for transistor channel regions |
Emmanuel Augendre, Nicolas Loubet, Sylvain Maitrejean |
2020-05-26 |
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| 10658578 |
Memory cell comprising a phase-change material |
Didier Dutartre |
2020-05-19 |
$14,292,000 |
| 10600786 |
Method for fabricating a device with a tensile-strained NMOS transistor and a uniaxial compression strained PMOS transistor |
Sylvain Maitrejean, Emmanuel Augendre, Shay Reboh |
2020-03-24 |
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| 10515965 |
Method to induce strain in finFET channels from an adjacent region |
Nicolas Loubet |
2019-12-24 |
$51,545,000 |
| 10510955 |
Phase change memory |
Michel Haond, Paola Zuliani |
2019-12-17 |
$33,776,000 |
| 10505043 |
Semiconductor device with fin and related methods |
Nicolas Loubet |
2019-12-10 |
$11,136,000 |
| 10483393 |
Method to induce strain in 3-D microfabricated structures |
Nicolas Loubet |
2019-11-19 |
$8,778,000 |
