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Method and system for forming an oxynitride layer by performing oxidation and nitridation concurrently |
Cory Wajda, Toshihara Furakawa |
2009-04-14 |
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Method and system for forming an oxynitride layer |
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Formation of ultra-thin oxide layers by self-limiting interfacial oxidation |
David L. O'Meara, Cory Wajda, Anthony Dip, Michael Toeller, Toshihara Furukawa +6 more |
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Method of forming uniform ultra-thin oxynitride layers |
David L. O'Meara, Cory Wajda, Anthony Dip, Michael Toeller, Toshihara Furukawa +6 more |
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Forming gate oxides having multiple thicknesses |
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Interfacial oxidation process for high-k gate dielectric process integration |
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Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric |
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