JG

John M. Grant

FS Freeescale Semiconductor: 10 patents #296 of 3,767Top 8%
Motorola: 2 patents #4,475 of 12,470Top 40%
Sharp Kabushiki Kaisha: 1 patents #6,861 of 10,731Top 65%
ST Sharp Microelectronics Technology: 1 patents #25 of 57Top 45%
Overall (All Time): #385,215 of 4,157,543Top 10%
13
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
8445939 Method of forming a semiconductor device and semiconductor device 2013-05-21
8076189 Method of forming a semiconductor device and semiconductor device 2011-12-13
8039339 Separate layer formation in a semiconductor device Srikanth B. Samavedam, Suresh Venkatesan 2011-10-18
7879663 Trench formation in a semiconductor material Mark D. Hall, Glenn C. Abeln 2011-02-01
7790528 Dual substrate orientation or bulk on SOI integrations using oxidation for silicon epitaxy spacer formation Gregory S. Spencer, Gauri Karve 2010-09-07
7015517 Semiconductor device incorporating a defect controlled strained channel structure and method of making the same Tab A. Stephens 2006-03-21
6919258 Semiconductor device incorporating a defect controlled strained channel structure and method of making the same Tab A. Stephens 2005-07-19
6908822 Semiconductor device having an insulating layer and method for forming Michael Rendon, Ross E. Noble 2005-06-21
6891229 Inverted isolation formed with spacers Andrea Franke, Jonathan Cobb, Al T. Koh, Yeong-Jyh T. Lii, Bich-Yen Nguyen +1 more 2005-05-10
6831350 Semiconductor structure with different lattice constant materials and method for forming the same Chun-Li Liu, Alexander L. Barr, Bich-Yen Nguyen, Marius Orlowski, Tab A. Stephens +2 more 2004-12-14
6551922 Method for making a semiconductor device by variable chemical mechanical polish downforce Thomas S. Kobayashi 2003-04-22
6423619 Transistor metal gate structure that minimizes non-planarity effects and method of formation Olubunmi O. Adetutu, Yolanda Musgrove 2002-07-23
5736002 Methods and equipment for anisotropic, patterned conversion of copper into selectively removable compounds and for removal of same Lynn R. Allen 1998-04-07