| 5143820 |
Method for fabricating high circuit density, self-aligned metal linens to contact windows |
Hans A. Protschka, Dave Stanasolovich, Jake Theisen |
1992-09-01 |
| 4814290 |
Method for providing increased dopant concentration in selected regions of semiconductor devices |
Jeffrey R. Barber, David Meyer, David Stanasolovich |
1989-03-21 |
| 4805142 |
Multiple ROM data state, read/write memory cell |
Claude L. Bertin |
1989-02-14 |
| RE32401 |
Quaternary FET read only memory |
Kenneth E. Beilstein, Jr. |
1987-04-14 |
| 4583201 |
Resistor personalized memory device using a resistive gate fet |
Claude L. Bertin |
1986-04-15 |
| 4564584 |
Photoresist lift-off process for fabricating semiconductor devices |
Edward C. Fredericks |
1986-01-14 |
| 4536944 |
Method of making ROM/PLA semiconductor device by late stage personalization |
Al M. Bracco, Arthur Edenfeld |
1985-08-27 |
| 4488265 |
Integrated dynamic RAM and ROS |
— |
1984-12-11 |
| 4472726 |
Two carrier dual injector apparatus |
Donelli J. DiMaria |
1984-09-18 |
| 4399522 |
Non-volatile static RAM cell with enhanced conduction insulators |
— |
1983-08-16 |
| 4388704 |
Non-volatile RAM cell with enhanced conduction insulators |
Claude L. Bertin, Francis W. Wiedman |
1983-06-14 |
| 4380057 |
Electrically alterable double dense memory |
Wendell P. Noble, Francis W. Wiedman |
1983-04-12 |
| 4363110 |
Non-volatile dynamic RAM cell |
Howard L. Kalter, Parsotam T. Patel |
1982-12-07 |
| 4358890 |
Process for making a dual implanted drain extension for bucket brigade device tetrode structure |
Lawrence G. Heller, Harry J. Jones, Donald A. Soderman |
1982-11-16 |
| 4336603 |
Three terminal electrically erasable programmable read only memory |
Francis W. Wiedman |
1982-06-22 |
| 4334292 |
Low voltage electrically erasable programmable read only memory |
— |
1982-06-08 |
| 4329186 |
Simultaneously forming fully implanted DMOS together with enhancement and depletion mode MOSFET devices |
Francisco H. DeLaMoneda |
1982-05-11 |
| 4276095 |
Method of making a MOSFET device with reduced sensitivity of threshold voltage to source to substrate voltage variations |
Kenneth E. Beilstein, Jr. |
1981-06-30 |
| 4202044 |
Quaternary FET read only memory |
Kenneth E. Beilstein, Jr. |
1980-05-06 |
