Issued Patents All Time
Showing 25 most recent of 26 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8705306 | Method for using a bit specific reference level to read a phase change memory | Tyler Lowrey, Ward Parkinson, Ferdinando Bedeschi, Claudio Resta, Roberto Gastaldi | 2014-04-22 |
| 8259525 | Using a bit specific reference level to read a memory | Tyler Lowrey, Ward Parkinson, Ferdinando Bedeschi, Claudio Resta, Roberto Gastaldi | 2012-09-04 |
| 8116159 | Using a bit specific reference level to read a resistive memory | Tyler Lowrey, Ward Parkinson, Ferdinando Bedeschi, Claudio Resta, Roberto Gastaldi | 2012-02-14 |
| 8098512 | Reading phase change memories | Ward Parkinson, Claudio Resta, Roberto Gastaldi, Ferdinando Bedeschi | 2012-01-17 |
| 7936584 | Reading phase change memories | Ward Parkinson, Claudio Resta, Roberto Gastaldi, Ferdinando Bedeschi | 2011-05-03 |
| 7577024 | Streaming mode programming in phase change memories | Richard E. Fackenthal, Ferdinando Bedeschi, Ravi Annavajjhala | 2009-08-18 |
| 7563684 | Process for manufacturing an array of cells including selection bipolar junction transistors | Fabio Pellizzer, Roberto Gastaldi, Loris Vendrame, Augusto Benvenuti, Tyler Lowrey | 2009-07-21 |
| 7495944 | Reading phase change memories | Ward Parkinson, Claudio Resta, Roberto Gastaldi, Ferdinando Bedeschi | 2009-02-24 |
| 7446011 | Array of cells including a selection bipolar transistor and fabrication method thereof | Fabio Pellizzer, Roberto Bez | 2008-11-04 |
| 7372166 | Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof | Roberto Bez, Fabio Pellizzer | 2008-05-13 |
| 7135756 | Array of cells including a selection bipolar transistor and fabrication method thereof | Fabio Pellizzer, Roberto Bez | 2006-11-14 |
| 7110289 | Method and system for controlling MRAM write current to reduce power consumption | Kyusik Sin, Hugh C. Hiner, Xizeng Shi, William D. Jensen, Hua-Ching Tong +4 more | 2006-09-19 |
| 7075841 | Writing circuit for a phase change memory device | Claudio Resta, Ferdinando Bedeschi, Fabio Pellizzer | 2006-07-11 |
| 7012832 | Magnetic memory cell with plural read transistors | Kyusik Sin, Matthew R. Gibbons, William D. Jensen, Hugh C. Hiner, Xizeng Stone Shi +2 more | 2006-03-14 |
| 6989580 | Process for manufacturing an array of cells including selection bipolar junction transistors | Fabio Pellizzer, Roberto Gastaldi, Loris Vendrame, Augusto Benvenuti, Tyler Lowrey | 2006-01-24 |
| 6972430 | Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof | Roberto Bez, Fabio Pellizzer | 2005-12-06 |
| 6627931 | Ferroelectric memory cell and corresponding manufacturing method | Raffaele Zambrano | 2003-09-30 |
| 6567296 | Memory device | Tyler Lowrey, Roberto Bez, Guy Wicker, Edward J. Spall, Stephen J. Hudgens +1 more | 2003-05-20 |
| 6532171 | Nonvolatile semiconductor memory capable of selectively erasing a plurality of elemental memory units | Roberto Gastaldi, Paolo Cappelletti, Giovanni Campardo, Rino Micheloni | 2003-03-11 |
| 5905677 | Voltage regulator for non-volatile semiconductor electrically programmable memory devices | Emilio Camerlenghi | 1999-05-18 |
| 5659516 | Voltage regulator for non-volatile semiconductor electrically programmable memory devices | Emilio Camerlenghi | 1997-08-19 |
| 5612913 | Byte erasable EEPROM fully compatible with a single power supply flash-EPROM process | Paolo Cappelletti | 1997-03-18 |
| 5576990 | Voltage regulator for non-volatile semiconductor memory devices | Emilio Camerlenghi | 1996-11-19 |
| 4847811 | Pre-charging circuit for word lines of a memory system, in particular with programmable cells | Roberto Gastaldi | 1989-07-11 |
| 4807188 | Nonvolatile memory device with a high number of cycle programming endurance | — | 1989-02-21 |