FH

Frank Hintermaier

Infineon Technologies Ag: 19 patents #513 of 7,486Top 7%
AC Advanced Technology & Materials Co.: 15 patents #32 of 410Top 8%
SA Siemens Aktiengesellschaft: 8 patents #1,429 of 22,248Top 7%
Overall (All Time): #108,944 of 4,157,543Top 3%
33
Patents All Time

Issued Patents All Time

Showing 1–25 of 33 patents

Patent #TitleCo-InventorsDate
7122856 Capacitor having a barrier layer made of a transition metal phosphide, arsenide or sulfide 2006-10-17
7005303 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices Christine Dehm, Wolfgang Hoenlein, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix +2 more 2006-02-28
6790676 Method for producing a ferroelectric layer Hans Cerva, Walter Hartner, Joachim Hoepfner, Guenther Schindler, Volker Weinrich +1 more 2004-09-14
6787186 Method of controlled chemical vapor deposition of a metal oxide ceramic layer 2004-09-07
6730523 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices Christine Dehm, Wolfgang Hoenlein, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix +2 more 2004-05-04
6730562 Method of patterning ferroelectric layers Manfred Engelhardt, Walter Hartner, Gunther Schindler, Volker Weinrich 2004-05-04
6713797 Textured Bi-based oxide ceramic films Debra A. Desrochers, Bryan C. Hendrix, Jeffrey F. Roeder 2004-03-30
6693318 Reduced diffusion of a mobile specie from a metal oxide ceramic 2004-02-17
6669857 Process for etching bismuth-containing oxide films 2003-12-30
6605505 Process for producing an integrated semiconductor memory configuration Carlos Mazure-Espejo 2003-08-12
6586348 Method for preventing etching-induced damage to a metal oxide film by patterning the film after a nucleation anneal but while still amorphous and then thermally annealing to crystallize Walter Hartner, Gunther Schindler, Volker Weinrich 2003-07-01
6527848 Complex of an element of transition group IV or V for forming an improved precursor combination Ralf Metzger, Christoph Werner 2003-03-04
6500489 Low temperature CVD processes for preparing ferroelectric films using Bi alcoxides Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers 2002-12-31
6495415 Method for fabricating a patterned layer Walter Hartner, Igor Kasko, Volker Weinrich, Gunther Schindler, Hermann Wendt 2002-12-17
6444264 Method for liquid delivery CVD utilizing alkane and polyamine solvent compositions Thomas H. Baum 2002-09-03
6438019 Ferroelectric random access memory (FeRAM) having storage capacitors with different coercive voltages Walter Hartner, Gunther Schindler 2002-08-20
6350643 Reduced degradation of metal oxide ceramic due to diffusion of a mobile specie therefrom Jeffrey F. Roeder, Bryan C. Hendrix, Debra A. Desrochers, Thomas H. Baum 2002-02-26
6316802 Easy to manufacture integrated semiconductor memory configuration with platinum electrodes Gunther Schindler, Walter Hartner, Carlos Mazure-Espejo, Rainer Bruchhaus, Wolfgang Hönlein +1 more 2001-11-13
6303391 Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices Christine Dehm, Wolfgang Hoenlein, Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix +2 more 2001-10-16
6297526 Process for producing barrier-free semiconductor memory configurations Carlos Mazure-Espejo 2001-10-02
6258153 Device for the deposition of substances 2001-07-10
6214105 Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition Thomas H. Baum 2001-04-10
6204158 Reduced diffusion of a mobile specie from a metal oxide ceramic into the substrate Bryan C. Hendrix, Jeffrey F. Roeder, Thomas H. Baum, Debra A. Desrochers 2001-03-20
6180420 Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers 2001-01-30
6177135 Low temperature CVD processes for preparing ferroelectric films using Bi amides Peter C. Van Buskirk, Jeffrey F. Roeder, Bryan C. Hendrix, Thomas H. Baum, Debra A. Desrochers 2001-01-23