Issued Patents All Time
Showing 25 most recent of 40 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12051967 | Integrated transistor and resistor-diode-capacitor snubber | Dean E. Probst, Joseph A. Yedinak, Balaji Padmanabhan, Peter A. Burke, Jeffery A. Neuls | 2024-07-30 |
| 10868113 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Joseph A. Yedinak, Dean E. Probst, Daniel M. Kinzer | 2020-12-15 |
| 10396216 | Device including a sidewall Schottky interface | Yi-Nan Su, Tirthajyoti Sarkar, Min Kyung Ko | 2019-08-27 |
| 9748329 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Joseph A. Yedinak | 2017-08-29 |
| 9679890 | Junction-less insulated gate current limiter device | Tirthajyoti Sarkar, Adrian Mikolajczak, Ihsiu Ho | 2017-06-13 |
| 9391193 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Joseph A. Yedinak, Daniel M. Kinzer, Dean E. Probst, Daniel Calafut | 2016-07-12 |
| 9293526 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Joseph A. Yedinak, Dean E. Probst | 2016-03-22 |
| 9018700 | Direct-drain trench FET with source and drain isolation | — | 2015-04-28 |
| 8963212 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Joseph A. Yedinak, Daniel M. Kinzer, Dean E. Probst, Daniel Calafut | 2015-02-24 |
| 8936985 | Methods related to power semiconductor devices with thick bottom oxide layers | Alan Elbanhawy, Dean E. Probst, Steven Sapp, Peter H. Wilson, Babak S. Sani +7 more | 2015-01-20 |
| 8803207 | Shielded gate field effect transistors | Thomas E. Grebs, Nathan Kraft, Rodney S. Ridley, Gary M. Dolny, Joseph A. Yedinak +1 more | 2014-08-12 |
| 8786045 | Power semiconductor devices having termination structures | Jaegil LEE, Jinyoung Jung, Hocheol Jang | 2014-07-22 |
| 8742401 | Field effect transistor with gated and non-gated trenches | Hamza Yilmaz, Daniel Calafut, Steven Sapp, Nathan Kraft | 2014-06-03 |
| 8710584 | FET device having ultra-low on-resistance and low gate charge | Izak Bencuya, Brian Mo | 2014-04-29 |
| 8598654 | MOSFET device with thick trench bottom oxide | Chanho Park, Ritu Sodhi | 2013-12-03 |
| 8592895 | Field effect transistor with source, heavy body region and shielded gate | Hamza Yilmaz, Daniel Calafut, Steven Sapp, Nathan Kraft | 2013-11-26 |
| 8564024 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Joseph A. Yedinak, Daniel M. Kinzer, Dean E. Probst | 2013-10-22 |
| 8304829 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Joseph A. Yedinak | 2012-11-06 |
| 8193570 | Synchronous buck converter using shielded gate field effect transistors | Steven Sapp, Christopher Boguslaw Kocon | 2012-06-05 |
| 8193581 | Trench-based power semiconductor devices with increased breakdown voltage characteristics | Joseph A. Yedinak, Dean E. Probst, Daniel Calafut | 2012-06-05 |
| 8143124 | Methods of making power semiconductor devices with thick bottom oxide layer | Alan Elbanhawy, Dean E. Probst, Steven Sapp, Peter H. Wilson, Babak S. Sani +7 more | 2012-03-27 |
| 8101484 | Method of forming a FET having ultra-low on-resistance and low gate charge | Izak Bencuya, Brian Mo | 2012-01-24 |
| 8072027 | 3D channel architecture for semiconductor devices | Suku Kim, Dan Calafut, Ihsiu Ho, Dan Kinzer, Steven Sapp +2 more | 2011-12-06 |
| 7982265 | Trenched shield gate power semiconductor devices and methods of manufacture | Alan Elbanhawy, Steven Sapp, Peter H. Wilson, Babak S. Sani, Christopher Boguslaw Kocon | 2011-07-19 |
| 7855415 | Power semiconductor devices having termination structures and methods of manufacture | Jaegil LEE, Jinyoung Jung, Hocheol Jang | 2010-12-21 |