Issued Patents All Time
Showing 76–86 of 86 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8896030 | Integrated circuits with selective gate electrode recess | Srijit Mukherjee, Christopher J. Wiegand, Tyler J. Weeks, Mark Liu | 2014-11-25 |
| 8426858 | Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain | Jack Hwang, Anand S. Murthy, Andrew N. Westmeyer | 2013-04-23 |
| 7858981 | Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain | Jack Hwang, Anand S. Murthy, Andrew N. Westmeyer | 2010-12-28 |
| 7812394 | CMOS transistor junction regions formed by a CVD etching and deposition sequence | Anand S. Murthy, Glenn A. Glass, Andrew N. Westmeyer, Jeffrey R. Wank | 2010-10-12 |
| 7678631 | Formation of strain-inducing films | Anand S. Murthy, Glenn A. Glass | 2010-03-16 |
| 7595248 | Angled implantation for removal of thin film layers | Justin K. Brask, Justin S. Sandford, Jack T. Kavalieros, Matthew V. Metz | 2009-09-29 |
| 7479432 | CMOS transistor junction regions formed by a CVD etching and deposition sequence | Anand S. Murthy, Glenn A. Glass, Andrew N. Westmeyer, Jeffrey R. Wank | 2009-01-20 |
| 7479431 | Strained NMOS transistor featuring deep carbon doped regions and raised donor doped source and drain | Jack Hwang, Anand S. Murthy, Andrew N. Westmeyer | 2009-01-20 |
| 7402872 | Method for forming an integrated circuit | Anand S. Murthy, Glenn A. Glass, Andrew N. Westmeyer, Tahir Ghani | 2008-07-22 |
| 7195985 | CMOS transistor junction regions formed by a CVD etching and deposition sequence | Anand S. Murthy, Glenn A. Glass, Andrew N. Westmeyer, Jeffrey R. Wank | 2007-03-27 |
| 6103614 | Hydrogen ambient process for low contact resistivity PdGe contacts to III-V materials | David Ahmari, David F. Lemmerhirt, Gregory E. Stillman | 2000-08-15 |