Issued Patents All Time
Showing 26–50 of 53 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9520399 | Floating body memory cell having gates favoring different conductivity type regions | Peter L. D. Chang, Uygar E. Avci, Ibrahim Ban | 2016-12-13 |
| 9496486 | Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same | Brian S. Doyle, Charles C. Kuo, Uday Shah, Kaan Oguz, Mark L. Doczy +2 more | 2016-11-15 |
| 9455011 | Methods and systems to read a magnetic tunnel junction (MTJ) based memory cell based on a pulsed read current | Arijit Raychowdhury, Brian S. Doyle, Charles C. Kuo, James W. Tschanz, Fatih Hamzaoglu +2 more | 2016-09-27 |
| 9455343 | Hybrid phase field effect transistor | Ravi Pillarisetty, Brian S. Doyle, Elijah V. Karpov, Uday Shah, Charles C. Kuo +1 more | 2016-09-27 |
| 9437808 | Electric field enhanced spin transfer torque memory (STTM) device | Brian S. Doyle, Charles C. Kuo, Roksana Golizadeh Mojarad, Uday Shah | 2016-09-06 |
| 9418997 | Floating body memory cell having gates favoring different conductivity type regions | Peter L. D. Chang, Uygar E. Avci, Ibrahim Ban | 2016-08-16 |
| 9275999 | Floating body memory cell having gates favoring different conductivity type regions | Peter L. D. Chang, Uygar E. Avci, Ibrahim Ban | 2016-03-01 |
| 9231194 | High stability spintronic memory | Charles C. Kuo, Kaan Oguz, Brian S. Doyle, Elijah V. Karpov, Roksana Golizadeh Mojarad +1 more | 2016-01-05 |
| 9214215 | Decreased switching current in spin-transfer torque memory | Elijah V. Karpov, Brian S. Doyle, Kaan Oguz, Satyarth Suri, Robert S. Chau +2 more | 2015-12-15 |
| 9166150 | Electric field enhanced spin transfer torque memory (STTM) device | Brian S. Doyle, Charles C. Kuo, Roksana Golizadeh Mojarad, Uday Shah | 2015-10-20 |
| 9105839 | Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same | Brian S. Doyle, Charles C. Kuo, Uday Shah, Kaan Oguz, Mark L. Doczy +2 more | 2015-08-11 |
| 8980650 | Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer | Kaan Oguz, Mark L. Doczy, Brian S. Doyle, Uday Shah, Roksana Golizadeh Mojarad +1 more | 2015-03-17 |
| 8980707 | Floating body memory cell having gates favoring different conductivity type regions | Peter L. D. Chang, Uygar E. Avci, Ibrahim Ban | 2015-03-17 |
| 8913422 | Decreased switching current in spin-transfer torque memory | Elijah V. Karpov, Brian S. Doyle, Kaan Oguz, Satyarth Suri, Robert S. Chau +2 more | 2014-12-16 |
| 8841644 | Thermal isolation in memory cells | Elijah V. Karpov | 2014-09-23 |
| 8836056 | Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer | Kaan Oguz, Mark L. Doczy, Brian S. Doyle, Uday Shah, Roksana Golizadeh Mojarad +1 more | 2014-09-16 |
| 8796794 | Write current reduction in spin transfer torque memory devices | Brian S. Doyle, Charles C. Kuo, Dmitri E. Nikonov, Robert S. Chau | 2014-08-05 |
| 8786040 | Perpendicular spin transfer torque memory (STTM) device having offset cells and method to form same | Brian S. Doyle, Charles C. Kuo, Uday Shah, Kaan Oguz, Mark L. Doczy +2 more | 2014-07-22 |
| 8569812 | Floating body memory cell having gates favoring different conductivity type regions | Peter L. D. Chang, Uygar E. Avci, Ibrahim Ban | 2013-10-29 |
| 8217435 | Floating body memory cell having gates favoring different conductivity type regions | Peter L. D. Chang, Uygar E. Avci, Ibrahim Ban | 2012-07-10 |
| 8076664 | Phase change memory with layered insulator | Semyon D. Savransky, Ilya V. Karpov | 2011-12-13 |
| 7944003 | Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory | Ibrahim Ban, Avci E. Uygar | 2011-05-17 |
| 7719057 | Multiple oxide thickness for a semiconductor device | Martin D. Giles, Stephen M. Cea | 2010-05-18 |
| 7646071 | Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory | Ibrahim Ban, Avci E. Uygar | 2010-01-12 |
| 7598560 | Hetero-bimos injection process for non-volatile flash memory | Jack T. Kavalieros, Suman Datta, Robert S. Chau | 2009-10-06 |