Issued Patents All Time
Showing 101–125 of 133 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9184290 | Method of forming well-controlled extension profile in MOSFET by silicon germanium based sacrificial layer | Szu-Lin Cheng, Jack O. Chu, Isaac Lauer | 2015-11-10 |
| 9177956 | Field effect transistor (FET) with self-aligned contacts, integrated circuit (IC) chip and method of manufacture | Szu-Lin Cheng, Jack O. Chu, Isaac Lauer | 2015-11-03 |
| 9170338 | Charge sensors using inverted lateral bipolar junction transistors | Jin Cai, Tak H. Ning, Sufi Zafar | 2015-10-27 |
| 9064776 | Radiation hardened transistors based on graphene and carbon nanotubes | Yu-Ming Lin | 2015-06-23 |
| 9059195 | Lateral bipolar transistors having partially-depleted intrinsic base | Jin Cai, Tak H. Ning, Ghavam G. Shahidi | 2015-06-16 |
| 9059095 | Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact | Szu-Lin Cheng, Jack O. Chu, Isaac Lauer | 2015-06-16 |
| 9059205 | Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same | Szu-Lin Cheng, Jack O. Chu, Isaac Lauer | 2015-06-16 |
| 9040929 | Charge sensors using inverted lateral bipolar junction transistors | Jin Cai, Tak H. Ning, Sufi Zafar | 2015-05-26 |
| 8980667 | Charge sensors using inverted lateral bipolar junction transistors | Jin Cai, Tak H. Ning, Sufi Zafar | 2015-03-17 |
| 8962436 | Lateral bipolar transistors having partially-depleted intrinsic base | Jin Cai, Tak H. Ning, Ghavam G. Shahidi | 2015-02-24 |
| 8912030 | Method for radiation monitoring | Jin Cai, Effendi Leobandung, Tak H. Ning | 2014-12-16 |
| 8895995 | Lateral silicon-on-insulator bipolar junction transistor radiation dosimeter | Jin Cai, Effendi Leobandung, Tak H. Ning | 2014-11-25 |
| 8877606 | Low cost fabrication of double box back gate silicon-on-insulator wafers with subsequent self aligned shallow trench isolation | Robert H. Dennard, David R. Greenberg, Amlan Majumdar, Leathen Shi | 2014-11-04 |
| 8803131 | Metal-free integrated circuits comprising graphene and carbon nanotubes | Yu-Ming Lin | 2014-08-12 |
| 8796668 | Metal-free integrated circuits comprising graphene and carbon nanotubes | Yu-Ming Lin | 2014-08-05 |
| 8673703 | Fabrication of graphene nanoelectronic devices on SOI structures | Yu-Ming Lin | 2014-03-18 |
| 8614111 | Fully depleted silicon on insulator neutron detector | Michael S. Gordon, Kenneth P. Rodbell | 2013-12-24 |
| 8586426 | Method of forming isolation structures for SOI devices with ultrathin SOI and ultrathin box | Robert H. Dennard, Marwan H. Khater, Leathen Shi | 2013-11-19 |
| 8587063 | Hybrid double box back gate silicon-on-insulator wafers with enhanced mobility channels | Robert H. Dennard, Qiqing C. Ouyang | 2013-11-19 |
| 8580635 | Method of replacing silicon with metal in integrated circuit chip fabrication | Kevin K. Chan, Christopher P. D'Emic, Young-Hee Kim, Dae-Gyu Park | 2013-11-12 |
| 8546246 | Radiation hardened transistors based on graphene and carbon nanotubes | Yu-Ming Lin | 2013-10-01 |
| 8492838 | Isolation structures for SOI devices with ultrathin SOI and ultrathin box | Robert H. Dennard, Marwan H. Khater, Leathen Shi | 2013-07-23 |
| 8476683 | On-chip radiation dosimeter | Michael S. Gordon, Kenneth P. Rodbell | 2013-07-02 |
| 8455861 | Graphene based switching device having a tunable bandgap | Yu-Ming Lin | 2013-06-04 |
| 8450198 | Graphene based switching device having a tunable bandgap | Yu-Ming Lin | 2013-05-28 |