Issued Patents All Time
Showing 76–100 of 133 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9691886 | Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base | Jin Cai, Kevin K. Chan, Christopher P. D'Emic, Tak H. Ning | 2017-06-27 |
| 9679967 | Contact resistance reduction by III-V Ga deficient surface | Takashi Ando, Kevin K. Chan, John Rozen, Yu Zhu | 2017-06-13 |
| 9659979 | Sensors including complementary lateral bipolar junction transistors | Michael S. Gordon, Tak H. Ning, Kenneth P. Rodbell | 2017-05-23 |
| 9659655 | Memory arrays using common floating gate series devices | Kevin K. Chan, Bahman Hekmatshoartabari, Tak H. Ning | 2017-05-23 |
| 9647099 | Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having an epitaxially grown base | Jin Cai, Kevin K. Chan, Christopher P. D'Emic, Tak H. Ning | 2017-05-09 |
| 9625409 | Ultra-sensitive biosensor based on lateral bipolar junction transistor having self-aligned epitaxially grown base | Jin Cai, Tak H. Ning, Sufi Zafar | 2017-04-18 |
| 9614148 | Magnetic-field and magnetic-field gradient sensors based on lateral SOI bipolar transistors | Tak H. Ning | 2017-04-04 |
| 9589791 | Compound finFET device including oxidized III-V fin isolator | Szu-Lin Cheng, Isaac Lauer, Kuen-Ting Shiu | 2017-03-07 |
| 9564429 | Lateral bipolar sensor with sensing signal amplification | Jin Cai, Tak H. Ning, Sufi Zafar | 2017-02-07 |
| 9548355 | Compound finFET device including oxidized III-V fin isolator | Szu-Lin Cheng, Isaac Lauer, Kuen-Ting Shiu | 2017-01-17 |
| 9548238 | Method of manufacturing a semiconductor device using a self-aligned OPL replacement contact and patterned HSQ and a semiconductor device formed by same | Szu-Lin Cheng, Jack O. Chu, Isaac Lauer | 2017-01-17 |
| 9536788 | Complementary SOI lateral bipolar transistors with backplate bias | Tak H. Ning | 2017-01-03 |
| 9515198 | Magnetic-field and magnetic-field gradient sensors based on lateral SOI bipolar transistors | Tak H. Ning | 2016-12-06 |
| 9502504 | SOI lateral bipolar transistors having surrounding extrinsic base portions | Jin Cai, Kevin K. Chan, Tak H. Ning | 2016-11-22 |
| 9496347 | Graded buffer epitaxy in aspect ratio trapping | Cheng-Wei Cheng, Amlan Majumdar, Kuen-Ting Shiu | 2016-11-15 |
| 9437718 | Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown | Jin Cai, Kevin K. Chan, Tak H. Ning, Joonah Yoon | 2016-09-06 |
| 9431301 | Nanowire field effect transistor (FET) and method for fabricating the same | Jack O. Chu, Szu-Lin Cheng, Isaac Lauer, Kuen-Ting Shiu | 2016-08-30 |
| 9405017 | Ultra-sensitive radiation dosimeters | Yu-Ming Lin | 2016-08-02 |
| 9385122 | Method of manufacturing a semiconductor device using source/drain epitaxial overgrowth for forming self-aligned contacts without spacer loss and a semiconductor device formed by same | Szu-Lin Cheng, Jack O. Chu, Isaac Lauer | 2016-07-05 |
| 9377543 | Charge sensors using inverted lateral bipolar junction transistors | Jin Cai, Tak H. Ning, Sufi Zafar | 2016-06-28 |
| 9379028 | SOI CMOS structure having programmable floating backplate | Jin Cai, Robert H. Dennard, Ali Khakifirooz, Tak H. Ning | 2016-06-28 |
| 9331097 | High speed bipolar junction transistor for high voltage applications | Jin Cai, Tak H. Ning | 2016-05-03 |
| 9318555 | Fabrication of graphene nanoelectronic devices on SOI structures | Yu-Ming Lin | 2016-04-19 |
| 9318585 | Semiconductor-on-insulator (SOI) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown | Jin Cai, Kevin K. Chan, Tak H. Ning, Joonah Yoon | 2016-04-19 |
| 9240326 | Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact | Szu-Lin Cheng, Jack O. Chu, Isaac Lauer | 2016-01-19 |