Issued Patents All Time
Showing 26–45 of 45 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7872901 | Programmable-resistance memory cell | Johannes G. Bednorz, Siegfried F. Karg | 2011-01-18 |
| 7851323 | Phase change material with filament electrode | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott | 2010-12-14 |
| 7834339 | Programmable-resistance memory cell | Johannes G. Bednorz, Eric A. Joseph, Siegfried F. Karg, Chung H. Lam, Alejandro G. Schrott | 2010-11-16 |
| 7834384 | Simultaneous conditioning of a plurality of memory cells through series resistors | Toshijaru Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more | 2010-11-16 |
| 7825486 | Memory cell and memory device | Siegfried F. Karg | 2010-11-02 |
| 7791141 | Field-enhanced programmable resistance memory cell | Chung H. Lam, Hon-Sum Philip Wong | 2010-09-07 |
| 7724999 | Electro-optical device | Thilo Eermann Curt Stöferle | 2010-05-25 |
| 7723714 | Programmable-resistance memory cell | Siegfried F. Karg | 2010-05-25 |
| 7579611 | Nonvolatile memory cell comprising a chalcogenide and a transition metal oxide | Chung H. Lam, Alejandro G. Schrott | 2009-08-25 |
| 7580596 | Non-volatile programmable optical element with absorption coefficient modulation | Thilo Hermann Curt Stoferle | 2009-08-25 |
| 7569459 | Nonvolatile programmable resistor memory cell | Siegfried F. Karg | 2009-08-04 |
| 7560721 | Phase change material with filament electrode | Matthew J. Breitwisch, Roger W. Cheek, Eric A. Joseph, Chung H. Lam, Alejandro G. Schrott | 2009-07-14 |
| 7541608 | Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells | Toshijaru Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more | 2009-06-02 |
| 7465952 | Programmable non-volatile resistance switching device | Santos F. Alvarado, Johannes G. Bednorz | 2008-12-16 |
| 7378678 | Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells | Toshijaru Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more | 2008-05-27 |
| 7376006 | Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element | Johannes G. Bednorz, John K. DeBrosse, Chung H. Lam, Jonathan Zanhong Sun | 2008-05-20 |
| 7324366 | Non-volatile memory architecture employing bipolar programmable resistance storage elements | Johannes G. Bednorz, Chung H. Lam | 2008-01-29 |
| 7256415 | Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells | Toshijaru Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Charles W. Koburger, III +1 more | 2007-08-14 |
| 7130212 | Field effect device with a channel with a switchable conductivity | Georg J. Bednorz, David J. Gundlach, Siegfried F. Karg, Heike E. Riel, Walter Riess | 2006-10-31 |
| 6990008 | Switchable capacitance and nonvolatile memory device using the same | Georg J. Bednorz, David J. Gundlach, Walter Riess | 2006-01-24 |