DA

David W. Abraham

IBM: 116 patents #440 of 70,183Top 1%
Infineon Technologies Ag: 5 patents #3,160 of 7,486Top 45%
Globalfoundries: 1 patents #2,221 of 4,424Top 55%
GL Goodrich Actuation Systems Limited: 1 patents #39 of 101Top 40%
UA US Army: 1 patents #2,720 of 6,974Top 40%
📍 Charleston, NJ: #1 of 14 inventorsTop 8%
🗺 New Jersey: #149 of 69,400 inventorsTop 1%
Overall (All Time): #9,918 of 4,157,543Top 1%
120
Patents All Time

Issued Patents All Time

Showing 76–100 of 120 patents

Patent #TitleCo-InventorsDate
7477567 Memory storage device with heating element Philip L. Trouilloud 2009-01-13
7476413 Low magnetization materials for high performance magnetic memory devices 2009-01-13
7453747 Active compensation for operating point drift in MRAM write operation Philip L. Trouilloud 2008-11-18
7301801 Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers Daniel C. Worledge 2007-11-27
7286421 Active compensation for operating point drift in MRAM write operation Philip L. Trouilloud 2007-10-23
7252774 Selective chemical etch method for MRAM soft layers Eugene J. O'Sullivan 2007-08-07
7211446 Method of patterning a magnetic tunnel junction stack for a magneto-resistive random access memory Michael C. Gaidis, Stephen L. Brown, Arunava Gupta, Chanro Park, Wolfgang Raberg 2007-05-01
7123507 Using permanent magnets in MRAM to assist write operation Yu Lu 2006-10-17
7112861 Magnetic tunnel junction cap structure and method for forming the same Sivananda K. Kanakasabapathy, Ulrich Klostermann 2006-09-26
7102916 Method and structure for selecting anisotropy axis angle of MRAM device for reduced power consumption Philip L. Trouilloud, John K. DeBrosse, Daniel C. Worledge 2006-09-05
7033881 Method for fabricating magnetic field concentrators as liners around conductive wires in microelectronic devices Michael C. Gaidis, Phillip L. Trouilloud, Sivananda K. Kanakasabapathy 2006-04-25
7034519 High frequency measurement for current-in-plane-tunneling Daniel C. Worledge 2006-04-25
7026673 Low magnetization materials for high performance magnetic memory devices 2006-04-11
6958929 Sensor compensation for environmental variations for magnetic random access memory Philip L. Trouilloud 2005-10-25
6927569 Techniques for electrically characterizing tunnel junction film stacks with little or no processing Daniel C. Worledge, Philip L. Trouilloud, Joerg Schmid 2005-08-09
6724674 Memory storage device with heating element Philip L. Trouilloud 2004-04-20
6711466 Method and system for maintaining a desired distance between a dispenser and a surface Richard A. John, Robert J. von Gutfeld 2004-03-23
6667897 Magnetic tunnel junction containing a ferrimagnetic layer and anti-parallel layer Philip L. Trouilloud 2003-12-23
6623158 Method and apparatus for thermal proximity imaging using pulsed energy Timothy J. Chainer, Philip L. Trouilloud 2003-09-23
6590750 Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices Philip Edward Batson, John Casimir Slonczewski, Philip L. Trouilloud, William J. Gallagher, Stuart Stephen Papworth Parkin 2003-07-08
6538919 Magnetic tunnel junctions using ferrimagnetic materials Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Philip L. Trouilloud 2003-03-25
6527856 Method for changing surface termination of a perovskite oxide substrate surface Matthew W. Copel, James Misewich, Alejandro G. Schrott, Ying Zhang 2003-03-04
6469690 Data sharing for multi-CPU mouse/keyboard switcher Robert S. Olyha, Jr. 2002-10-22
6452764 Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices Philip Edward Batson, William J. Gallagher, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Philip L. Trouilloud 2002-09-17
6385082 Thermally-assisted magnetic random access memory (MRAM) Philip L. Trouilloud 2002-05-07