Issued Patents All Time
Showing 1–18 of 18 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8906786 | Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same | Takashi Yokoyama | 2014-12-09 |
| 8603901 | Method for producing single crystal SiC substrate and single crystal SiC substrate produced by the same | Takashi Yokoyama | 2013-12-10 |
| 8563442 | Method for manufacturing nitrogen compound semiconductor substrate and nitrogen compound semiconductor substrate, and method for manufacturing single crystal SiC substrate and single crystal SiC substrate | Keisuke Kawamura, Hidetoshi Asamura, Takashi Yokoyama | 2013-10-22 |
| 7393763 | Manufacturing method of monocrystalline gallium nitride localized substrate | Motoi Nakao, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai, Fumihiko Jobe +1 more | 2008-07-01 |
| 7128788 | Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate | Motoi Nakao, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai, Fumihiko Jobe +1 more | 2006-10-31 |
| 7084049 | Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate | Motoi Nakao, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai, Fumihiko Jobe +1 more | 2006-08-01 |
| 7077875 | Manufacturing device for buried insulating layer type single crystal silicon carbide substrate | Motoi Nakao, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai, Fumihiko Jobe +1 more | 2006-07-18 |
| 6927144 | Method for manufacturing buried insulating layer type single crystal silicon carbide substrate | Motoi Nakao, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai, Fumihiko Jobe +1 more | 2005-08-09 |
| 6773508 | Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same | Motoi Nakao, Yoshiaki Ohbayashi, Keiji Mine, Fumihiko Jobe | 2004-08-10 |
| 6743729 | Etching method and etching apparatus of carbon thin film | Keiji Mine, Yoshiaki Ohbayashi, Fumihiko Jobe | 2004-06-01 |
| 5918136 | SOI substrate and method of producing the same | Sadao Nakashima, Norihiko Ohwada, Tatsuhiko Katayama | 1999-06-29 |
| 5665613 | Method of making semiconductor device having SIMOX structure | Sadao Nakashima, Norihiko Ohwada, Tatsuhiko Katayama | 1997-09-09 |
| 5658809 | SOI substrate and method of producing the same | Sadao Nakashima, Norihiko Ohwada, Tatsuhiko Katayama | 1997-08-19 |
| 5459347 | Method of making field-effect semiconductor device on SOI | Yasuhisa Omura | 1995-10-17 |
| 5225356 | Method of making field-effect semiconductor device on SOT | Yasuhisa Omura | 1993-07-06 |
| 5188973 | Method of manufacturing SOI semiconductor element | Yasuhisa Omura, Yasuo Kunii | 1993-02-23 |
| 5040043 | Power semiconductor device | Terukaza Ohno | 1991-08-13 |
| 4241359 | Semiconductor device having buried insulating layer | Masanobu Doken, Hisashi Ariyoshi | 1980-12-23 |