Issued Patents All Time
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7393763 | Manufacturing method of monocrystalline gallium nitride localized substrate | Katsutoshi Izumi, Motoi Nakao, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai +1 more | 2008-07-01 |
| 7128788 | Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate | Katsutoshi Izumi, Motoi Nakao, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai +1 more | 2006-10-31 |
| 7084049 | Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate | Katsutoshi Izumi, Motoi Nakao, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai +1 more | 2006-08-01 |
| 7077875 | Manufacturing device for buried insulating layer type single crystal silicon carbide substrate | Katsutoshi Izumi, Motoi Nakao, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai +1 more | 2006-07-18 |
| 6927144 | Method for manufacturing buried insulating layer type single crystal silicon carbide substrate | Katsutoshi Izumi, Motoi Nakao, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai +1 more | 2005-08-09 |
| 6773508 | Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same | Katsutoshi Izumi, Motoi Nakao, Yoshiaki Ohbayashi, Keiji Mine | 2004-08-10 |
| 6743729 | Etching method and etching apparatus of carbon thin film | Katsutoshi Izumi, Keiji Mine, Yoshiaki Ohbayashi | 2004-06-01 |