MN

Motoi Nakao

HO Hosiden: 6 patents #54 of 328Top 20%
OP Osaka Prefecture: 6 patents #5 of 59Top 9%
DA Daicel: 1 patents #265 of 523Top 55%
KT Kyushu Institute Of Technology: 1 patents #75 of 237Top 35%
Overall (All Time): #599,266 of 4,157,543Top 15%
8
Patents All Time

Issued Patents All Time

Showing 1–8 of 8 patents

Patent #TitleCo-InventorsDate
12258507 Fluorescent diamond and method for producing same Shinji Nagamachi, Masahiro Nishikawa, Ming-Te Liu 2025-03-25
7393763 Manufacturing method of monocrystalline gallium nitride localized substrate Katsutoshi Izumi, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai, Fumihiko Jobe +1 more 2008-07-01
7128788 Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate Katsutoshi Izumi, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai, Fumihiko Jobe +1 more 2006-10-31
7084049 Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate Katsutoshi Izumi, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai, Fumihiko Jobe +1 more 2006-08-01
7077875 Manufacturing device for buried insulating layer type single crystal silicon carbide substrate Katsutoshi Izumi, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai, Fumihiko Jobe +1 more 2006-07-18
6927144 Method for manufacturing buried insulating layer type single crystal silicon carbide substrate Katsutoshi Izumi, Yoshiaki Ohbayashi, Keiji Mine, Seisaku Hirai, Fumihiko Jobe +1 more 2005-08-09
6773508 Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same Katsutoshi Izumi, Yoshiaki Ohbayashi, Keiji Mine, Fumihiko Jobe 2004-08-10
6053035 Material evaluation method Satoshi Nomura, Shuji Takamatsu 2000-04-25