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Osaka Prefecture — 19 Patents

Rank (All Time): #30,554 of 105,732Top 30%

59 inventors

19 Patents All Time

Patents per Year

Top Inventors at Osaka Prefecture All Time

Showing 1–50 of 59 inventors

Rank	Name	Patents
1	Fumihiko Jobe	7
1	Katsutoshi Izumi	7
1	Keiji Mine	7
1	Yoshiaki Ohbayashi	7
#5	Motoi Nakao	6
#6	Seisaku Hirai	5
#6	Tomoyuki Tanaka	5
#8	Masaru Inoue	3
#8	Souichi Ogawa	3
#8	Takao Sugioka	3
#11	Kei Demizu	2
#11	Shinichi Tanaka	2
#11	Takumi Sone	2
#11	Yukihiro Sato	2
#15	Yoshihiko Sukeda	1
#15	Akio Okamoto	1
#15	Eiichi Ishii	1
#15	Eiji Tsuji	1
#15	Hideo Kakutani	1
#15	Hiromi Kiyama	1
#15	Hideto Matumoto	1
#15	Hiroki Miyamoto	1
#15	Hiroyuki Tsuchiya	1
#15	Kanzo Ishikawa	1
#15	Kazuki Natsukawa	1
#15	Katsumi Nishida	1
#15	Kazuhiro Nishikawa	1
#15	Kazumichi Shimizu	1
#15	Kiyohiro Mori	1
#15	Koichi Tanaka	1
#15	Lujun Pan	1
#15	Mamoru Takemura	1
#15	Mitsunari Kaji	1
#15	Mituaki Matumuro	1
#15	Michinosuke Ohta	1
#15	Nagao Miyazaki	1
#15	Noriyoshi Tsuji	1
#15	Osamu Suekane	1
#15	Sachio Nagata	1
#15	Shigeo Fukui	1
#15	Shunsaku Kawabata	1
#15	Shuji Yamada	1
#15	Soichi Ogawa	1
#15	Tadashi Hamada	1
#15	Takao Horie	1
#15	Tadashi Kitudo	1
#15	Takeshi Nagasaka	1
#15	Tetsuhiro Sakata	1
#15	Toshiki Goto	1
#15	Tomoyuki Mizukoshi	1

Most Valuable Patents

Patent	Est. Value	Year
Manufacturing device for buried insulating layer type single crystal silicon carbide substrate	$30K	2006
Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate	$27K	2006
Fe-Cr-Ni-Al ferritic alloys	$25K	1992
Method for manufacturing buried insulating layer type single crystal silicon carbide substrate	$21K	2005
Manufacturing apparatus for buried insulating layer-type semiconductor silicon carbide substrate	$20K	2006

All 100 most valuable US patents →