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Home › Manufacturing device for buried insulating layer type single crystal silicon carbide substrate

Manufacturing device for buried insulating layer type single crystal silicon carbide substrate

US Patent 7077875 · Granted Jul 18, 2006

Estimated economic value: $30,000 ⓘ

Assignee

Inventors

Katsutoshi Izumi (18 patents)
Motoi Nakao (8 patents)
Yoshiaki Ohbayashi (33 patents)
Keiji Mine (35 patents)
Seisaku Hirai (8 patents)
Fumihiko Jobe (7 patents)
Tomoyuki Tanaka (80 patents)

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