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Home › Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate

Manufacturing method for buried insulating layer-type semiconductor silicon carbide substrate

US Patent 7084049 · Granted Aug 1, 2006

Estimated economic value: $27,000 ⓘ

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Inventors

Katsutoshi Izumi (18 patents)
Motoi Nakao (8 patents)
Yoshiaki Ohbayashi (33 patents)
Keiji Mine (35 patents)
Seisaku Hirai (8 patents)
Fumihiko Jobe (7 patents)
Tomoyuki Tanaka (80 patents)

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