Issued Patents All Time
Showing 26–42 of 42 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6693001 | Process for producing semiconductor integrated circuit device | Shuji Ikeda, Naotaka Hashimoto, Hiroshi Momiji, Hiromi Abe, Shinichi Fukada +1 more | 2004-02-17 |
| 6656828 | Method of forming bump electrodes | Touta Maitani | 2003-12-02 |
| 6617691 | Semiconductor device | Takashi Nakajima, Tomio Iwasaki, Hiroyuki Ohta, Hideo Miura, Masashi Sahara +2 more | 2003-09-09 |
| 6583049 | Semiconductor integrated circuit device and method for making the same | Masayuki Suzuki, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda +3 more | 2003-06-24 |
| 6548904 | Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenum | Tomio Iwasaki, Hideo Miura, Takashi Nakajima, Hiroyuki Ohta, Masashi Sahara | 2003-04-15 |
| 6545362 | Semiconductor device and method of manufacturing the same | Hiroshi Moriya, Tomio Iwasaki, Hideo Miura, Masashi Sahara | 2003-04-08 |
| 6538329 | Semiconductor integrated circuit device and method for making the same | Masayuki Suzuki, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda +3 more | 2003-03-25 |
| 6503803 | Method of fabricating a semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer | Hiromi Todorobaru, Hideo Miura, Masayuki Suzuki, Shuji Ikeda, Masashi Sahara +5 more | 2003-01-07 |
| 6476492 | Semiconductor device having a capacitor and an interconnect layer with molybdenum-containing tungsten | Tomio Iwasaki, Hideo Miura, Takashi Nakajima, Hiroyuki Ohta, Masashi Sahara | 2002-11-05 |
| 6472754 | Semiconductor device with improved arrangements to avoid breakage of tungsten interconnector | Takashi Nakajima, Tomio Iwasaki, Hiroyuki Ohta, Hideo Miura, Masashi Sahara +2 more | 2002-10-29 |
| 6326216 | Process for producing semiconductor integrated circuit device | Hisayuki Kato, Hisahiko Abe, Masahito Yamazaki, Keiichi Yoshizumi | 2001-12-04 |
| 6300237 | Semiconductor integrated circuit device and method for making the same | Masayuki Suzuki, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda +3 more | 2001-10-09 |
| 6268658 | Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof | Hiromi Todorobaru, Hideo Miura, Masayuki Suzuki, Shuji Ikeda, Masashi Sahara +5 more | 2001-07-31 |
| 6031288 | Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof | Hiromi Todorobaru, Hideo Miura, Masayuki Suzuki, Shuji Ikeda, Masashi Sahara +5 more | 2000-02-29 |
| 5904556 | Method for making semiconductor integrated circuit device having interconnection structure using tungsten film | Masayuki Suzuki, Masashi Sahara, Shinichi Ishida, Hiromi Abe, Sonoko Tohda +3 more | 1999-05-18 |
| 5444012 | Method for manufacturing semiconductor integrated circuit device having a fuse element | Keiichi Yoshizumi, Kazushi Fukuda, Seiichi Ariga, Shuji Ikeda, Makoto Saeki +3 more | 1995-08-22 |
| 5188975 | Method of producing a connection hole for a DRAM having at least three conductor layers in a self alignment manner. | Masayuki Kojima, Fumiyuki Kanai | 1993-02-23 |