MC

Min-hwa Chi

Globalfoundries: 120 patents #10 of 4,424Top 1%
TSMC: 56 patents #575 of 12,232Top 5%
NS National Semiconductor: 27 patents #38 of 2,238Top 2%
VS Vanguard International Semiconductor: 19 patents #24 of 585Top 5%
SC Sien (Qingdao) Integrated Circuits Co.: 17 patents #1 of 20Top 5%
WM Worldwide Semiconductor Manufacturing: 10 patents #4 of 58Top 7%
S( Semiconductor Manufacturing International (Shanghai): 9 patents #50 of 1,122Top 5%
FO Foveonics: 6 patents #2 of 7Top 30%
FO Foveon: 3 patents #12 of 65Top 20%
GU Globalfoundries U.S.: 1 patents #344 of 665Top 55%
📍 Qingdao, NY: #1 of 10 inventorsTop 10%
Overall (All Time): #1,618 of 4,157,543Top 1%
273
Patents All Time

Issued Patents All Time

Showing 51–75 of 273 patents

Patent #TitleCo-InventorsDate
10038096 Three-dimensional finFET transistor with portion(s) of the fin channel removed in gate-last flow Hui Zang 2018-07-31
10032910 FinFET devices having asymmetrical epitaxially-grown source and drain regions and methods of forming the same Xusheng Wu, Changyong Xiao 2018-07-24
10014303 Devices with contact-to-gate shorting through conductive paths between fins and fabrication methods Hui Zang 2018-07-03
10003302 Modified tunneling field effect transistors and fabrication methods Yanxiang Liu 2018-06-19
9984932 Semiconductor fin loop for use with diffusion break Hui Zang 2018-05-29
9964605 Methods for crossed-fins FinFET device for sensing and measuring magnetic fields Xusheng Wu 2018-05-08
9916903 OTPROM for post-process programming using selective breakdown Akhilesh Gautam, Suresh Uppal 2018-03-13
9905673 Stress memorization and defect suppression techniques for NMOS transistor devices Wen-Pin Peng 2018-02-27
9881738 Capacitor structures with embedded electrodes and fabrication methods thereof Hui Zang 2018-01-30
9865603 Transistor structure having N-type and P-type elongated regions intersecting under common gate Hui Zang 2018-01-09
9842927 Integrated circuit structure without gate contact and method of forming same Hui Zang, Manfred Eller, Jerome Ciavatti 2017-12-12
9831175 Method, apparatus, and system for E-fuse in advanced CMOS technologies Suraj K. Patil 2017-11-28
9831248 Embedded DRAM cells having capacitors within trench silicide trenches of a semiconductor structure Hui Zang 2017-11-28
9831346 FinFETs with air-gap spacers and methods for forming the same Hui Zang 2017-11-28
9824748 SRAM bitcell structures facilitating biasing of pull-up transistors Hui Zang, Manfred Eller 2017-11-21
9818689 Metal-insulator-metal capacitor and methods of fabrication Hui Zang 2017-11-14
9812393 Programmable via devices with metal/semiconductor via links and fabrication methods thereof Ajey Poovannummoottil Jacob, Suraj K. Patil 2017-11-07
9805982 Apparatus and method of adjusting work-function metal thickness to provide variable threshold voltages in finFETs Hui Zang, Jinping Liu 2017-10-31
9799661 SRAM bitcell structures facilitating biasing of pull-down transistors Hui Zang, Manfred Eller 2017-10-24
9799514 Protecting, oxidizing, and etching of material lines for use in increasing or decreasing critical dimensions of hard mask lines Hui Zang 2017-10-24
9768325 Diodes and fabrication methods thereof 2017-09-19
9761691 Integrated circuits including replacement gate structures and methods for fabricating the same Dong-Woon Shin, Xusheng Wu 2017-09-12
9754903 Semiconductor structure with anti-efuse device Suraj K. Patil, Ajey Poovannummoottil Jacob 2017-09-05
9741615 Contacts for a fin-type field-effect transistor Hui Zang 2017-08-22
9734897 SRAM bitcell structures facilitating biasing of pass gate transistors Hui Zang, Manfred Eller 2017-08-15