Issued Patents All Time
Showing 51–75 of 144 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10679944 | Semiconductor structure with high resistivity wafer and fabricating method of bonding the same | Kuo-Yuh Yang, Chia-Huei Lin | 2020-06-09 |
| 10636892 | Semiconductor structure and manufacturing method thereof | Kuo-Yuh Yang | 2020-04-28 |
| 10600734 | Transistor structure in low noise amplifier | Chia-Huei Lin, Kuo-Yuh Yang | 2020-03-24 |
| 10529854 | Semiconductor device and method for fabricating the same | Chih-Wei Su, Je-Min WEN | 2020-01-07 |
| 10504768 | Contact structures to deep trench isolation structures and method of nanufacturing the same | Ke Dong, Shiang Yang Ong, Namchil Mun | 2019-12-10 |
| 10460980 | Semiconductor device comprising a deep trench isolation structure and a trap rich isolation structure in a substrate and a method of making the same | Chia-Huei Lin, Kuo-Yuh Yang | 2019-10-29 |
| 10411110 | Semiconductor structure and manufacturing method thereof | Kuo-Yuh Yang | 2019-09-10 |
| 10355072 | Power trench capacitor compatible with deep trench isolation process | Zeng Wang, Wei Si, Jeoung Mo Koo | 2019-07-16 |
| 10347712 | Semiconductor device and method for fabricating the same | Chia-Huei Lin, Kuo-Yuh Yang | 2019-07-09 |
| 10347710 | Thin film resistor methods of making contacts | Kemao Lin | 2019-07-09 |
| 10192886 | Creation of wide band gap material for integration to SOI thereof | Shaoqiang Zhang | 2019-01-29 |
| 10062710 | Integrated circuits with deep and ultra shallow trench isolations and methods for fabricating the same | Guan Huei See, Rui Tze Toh, Shaoqiang Zhang | 2018-08-28 |
| 10020394 | Extended drain metal-oxide-semiconductor transistor | Rui Tze Toh, Guan Huei See, Shaoqiang Zhang | 2018-07-10 |
| 9997393 | Methods for fabricating integrated circuits including substrate contacts | Yuzhan Wang, Bo Yu, Zeng Wang, Wensheng Deng | 2018-06-12 |
| 9899514 | Extended drain metal-oxide-semiconductor transistor | Rui Tze Toh, Guan Huei See, Shaoqiang Zhang | 2018-02-20 |
| 9842903 | Integrated circuits with laterally diffused metal oxide semiconductor structures and methods for fabricating the same | Yi-Hua Lu, Dongli Wang, Deyan Chen | 2017-12-12 |
| 9780207 | Self-aligned high voltage LDMOS | Liming Li, Shaoqiang Zhang, Han Xiao | 2017-10-03 |
| 9721969 | Creation of wide band gap material for integration to SOI thereof | Shaoqiang Zhang | 2017-08-01 |
| 9685364 | Silicon-on-insulator integrated circuit devices with body contact structures and methods for fabricating the same | Guan Huei See, Rui Tze Toh, Shaoqiang Zhang | 2017-06-20 |
| 9673084 | Isolation scheme for high voltage device | Kun Liu, Francis Benistant, Ming-Shuan Li, Namchil Mun, Shiang Yang Ong | 2017-06-06 |
| 9660020 | Integrated circuits with laterally diffused metal oxide semiconductor structures and methods for fabricating the same | Yi-Hua Lu, Dongli Wang, Deyan Chen | 2017-05-23 |
| 9570545 | High voltage trench transistor | Yemin Dong, Liang Yi, Zhanfeng Liu, Ramadas Nambatyathu | 2017-02-14 |
| 9525061 | Semiconductor device including an n-well structure | Jeoung Mo Koo, Guowei Zhang | 2016-12-20 |
| 9472512 | Integrated circuits with contacts through a buried oxide layer and methods of producing the same | Rui Tze Toh, Guan Huei See, Shaoqiang Zhang | 2016-10-18 |
| 9343571 | MOS with recessed lightly-doped drain | Guowei Zhang, Zhiqing Li | 2016-05-17 |