NO

Nobuyuki Ohtsuka

Fujitsu Limited: 21 patents #1,322 of 24,456Top 6%
FL Fujitsu Semiconductor Limited: 9 patents #48 of 1,301Top 4%
FL Fujitsu Microelectronics Limited: 2 patents #92 of 624Top 15%
DK Denki Kagaku Kogyo: 1 patents #291 of 655Top 45%
Overall (All Time): #108,231 of 4,157,543Top 3%
33
Patents All Time

Issued Patents All Time

Showing 1–25 of 33 patents

Patent #TitleCo-InventorsDate
9559058 Semiconductor device and method for manufacturing the same Masaki Haneda, Michie Sunayama, Noriyoshi Shimizu, Yoshiyuki Nakao, Takahiro Tabira 2017-01-31
8889505 Method for manufacturing semiconductor device Shinichi Akiyama, Kazuya Okubo 2014-11-18
8551832 Method for manufacturing semiconductor device Shinichi Akiyama, Kazuya Okubo 2013-10-08
8415798 Semiconductor device having a conductor buried in an opening Noriyoshi Shimizu 2013-04-09
8168532 Method of manufacturing a multilayer interconnection structure in a semiconductor device Masaki Haneda, Michie Sunayama, Noriyoshi Shimizu, Yoshiyuki Nakao, Takahiro Tabira 2012-05-01
8101513 Manufacture method for semiconductor device using damascene method Tsuyoshi Kanki, Hisaya Sakai, Noriyoshi Shimizu 2012-01-24
8071474 Method of manufacturing semiconductor device suitable for forming wiring using damascene method Noriyoshi Shimizu, Hideki Kitada, Yoshiyuki Nakao 2011-12-06
8067836 Semiconductor device with reduced increase in copper film resistance Masaki Haneda, Noriyoshi Shimizu, Yoshiyuki Nakao, Michie Sunayama, Takahiro Tabira 2011-11-29
7935624 Fabrication method of semiconductor device having a barrier layer containing Mn Noriyoshi Shimizu, Yoshiyuki Nakao, Hisaya Sakai 2011-05-03
7928476 Semiconductor device and method of manufacturing the same Hiroshi Kudo, Masaki Haneda, Tamotsu Owada 2011-04-19
7846833 Manufacture method for semiconductor device suitable for forming wirings by damascene method and semiconductor device Hideki Kitada, Noriyoshi Shimizu, Yoshiyuki Nakao 2010-12-07
7795141 Method of manufacturing semiconductor device suitable for forming wiring using damascene method Noriyoshi Shimizu, Hideki Kitada, Yoshiyuki Nakano 2010-09-14
7713869 Manufacture method for semiconductor device suitable for forming wirings by damascene method and semiconductor device Hideki Kitada, Noriyoshi Shimizu, Yoshiyuki Nakao 2010-05-11
7507659 Fabrication process of a semiconductor device Noriyoshi Shimizu, Yoshiyuki Nakao 2009-03-24
7507666 Manufacture method for semiconductor device having concave portions filled with conductor containing Cu as its main composition Yoshiyuki Nakao, Hideki Kitada, Noriyoshi Shimizu 2009-03-24
7413977 Method of manufacturing semiconductor device suitable for forming wiring using damascene method Noriyoshi Shimizu, Hideki Kitada, Yoshiyuki Nakao 2008-08-19
7279790 Semiconductor device and a manufacturing method thereof Hideki Kitada, Noriyoshi Shimizu, Takayuki Ohba 2007-10-09
7199044 Method for manufacturing semiconductor device Akira Furuya, Shinichi Ogawa, Hiroshi Okamura 2007-04-03
6992005 Semiconductor device and method of manufacturing the same Noriyoshi Shimizu, Hisaya Sakai, Yoshiyuki Nakao, Hiroki Kondo, Takashi Suzuki 2006-01-31
6900542 Semiconductor device having increased adhesion between a barrier layer for preventing copper diffusion and a conductive layer, and method of manufacturing the same Hisaya Sakai, Noriyoshi Shimizu 2005-05-31
6750541 Semiconductor device Noriyoshi Shimizu, Hisaya Sakai, Yoshiyuki Nakao, Hiroki Kondo, Takashi Suzuki 2004-06-15
6746957 Manufacture of semiconductor device with copper wiring Noriyoshi Shimizu 2004-06-08
6420467 Curable resin composition, adhesive composition, cured product and composite Kinpei Iwata, Hideyuki Takahashi, Koichi Taguchi 2002-07-16
6242808 Semiconductor device with copper wiring and semiconductor device manufacturing method Noriyoshi Shimizu, Hideki Kitada 2001-06-05
6159854 Process of growing conductive layer from gas phase Yasuo Matsumiya, Kuninori Kitahara 2000-12-12