JC

Jun Cai

FS Fairchild Semiconductor: 33 patents #10 of 715Top 2%
GE: 12 patents #2,707 of 36,430Top 8%
TI Texas Instruments: 11 patents #1,283 of 12,488Top 15%
SC Shenzhen Goodix Technology Co.: 9 patents #30 of 423Top 8%
General Motors: 9 patents #1,725 of 18,328Top 10%
Dow Global Technologies: 8 patents #568 of 4,534Top 15%
CM Chartered Semiconductor Manufacturing: 7 patents #90 of 840Top 15%
NP Nano Silicon Pte.: 6 patents #1 of 6Top 20%
ST Seagate Technology: 5 patents #1,086 of 4,626Top 25%
Caterpillar: 4 patents #1,659 of 8,398Top 20%
AS Akros Silicon: 3 patents #5 of 13Top 40%
FO Fortinet: 2 patents #217 of 528Top 45%
IN Intel: 2 patents #13,213 of 30,777Top 45%
IM Institute Of Microelectronics: 2 patents #32 of 153Top 25%
HC Hefei Xinsheng Optoelectronics Technology Co.: 1 patents #643 of 1,065Top 65%
SA Siemens Aktiengesellschaft: 1 patents #10,653 of 22,248Top 50%
BC Beijing Volcano Engine Technology Co.: 1 patents #29 of 152Top 20%
UN Unknown: 1 patents #29,356 of 83,584Top 40%
BO BOE: 1 patents #7,844 of 12,373Top 65%
Overall (All Time): #9,044 of 4,157,543Top 1%
125
Patents All Time

Issued Patents All Time

Showing 101–125 of 125 patents

Patent #TitleCo-InventorsDate
7608512 Integrated circuit structure with improved LDMOS design 2009-10-27
7602017 Short channel LV, MV, and HV CMOS devices 2009-10-13
7531888 Integrated latch-up free insulated gate bipolar transistor 2009-05-12
7355224 High voltage LDMOS 2008-04-08
7220646 Integrated circuit structure with improved LDMOS design 2007-05-22
7205612 Fully silicided NMOS device for electrostatic discharge protection Keng Foo Lo 2007-04-17
7180132 Enhanced RESURF HVPMOS device with stacked hetero-doping RIM and gradual drift region Michael Harley-Stead, Jim G. Holt 2007-02-20
7154150 Low triggering N MOS transistor for ESD protection working under fully silicided process without silicide blocks David Hu 2006-12-26
7125777 Asymmetric hetero-doped high-voltage MOSFET (AH2MOS) Michael Harley-Stead, Jim G. Holt 2006-10-24
7045830 High-voltage diodes formed in advanced power integrated circuit devices Micheal Harley-Stead, Jim G. Holt 2006-05-16
6873017 ESD protection for semiconductor products Alvin Sugerman, Steven Park 2005-03-29
6870218 Integrated circuit structure with improved LDMOS design 2005-03-22
6855609 Method of manufacturing ESD protection structure Guang Ping Hua, Jun Song, Keng Foo Lo 2005-02-15
6835985 ESD protection structure Guang Ping Hua, Jun Song, Keng Foo Lo 2004-12-28
6830966 Fully silicided NMOS device for electrostatic discharge protection Keng Foo Lo 2004-12-14
6787856 Low triggering N MOS transistor for electrostatic discharge protection device David Hu 2004-09-07
6787880 ESD parasitic bipolar transistors with high resistivity regions in the collector David Hu 2004-09-07
6664596 Stacked LDD high frequency LDMOSFET Pang Dow Foo, Narayanan Balasubramanian 2003-12-16
6589833 ESD parasitic bipolar transistors with high resistivity regions in the collector David Hu 2003-07-08
6507090 Fully silicide cascaded linked electrostatic discharge protection David Hu 2003-01-14
6489203 Stacked LDD high frequency LDMOSFET Pang Dow Foo, Narayanan Balasubramanian 2002-12-03
6444510 Low triggering N MOS transistor for ESD protection working under fully silicided process without silicide blocks David Hu 2002-09-03
6417541 ESD protection network with field oxide device and bonding pad Keng Foo Lo 2002-07-09
6329253 Thick oxide MOS device used in ESD protection circuit Jun Song, Yonqzang Zhang, Shyue Fong Quek, Ting Cheong Ang, Puay Ing Ong 2001-12-11
6310380 Electrostatic discharge protection transistor structure with a trench extending through the source or drain silicide layers Keng Foo Lo 2001-10-30