Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11810783 | Gallium nitride semiconductor device and method for manufacturing the same | Chiaki Sasaoka, Jun Kojima, Shoichi Onda, Masatake Nagaya, Daisuke Kawaguchi | 2023-11-07 |
| 11810821 | Semiconductor chip and method for manufacturing the same | Masatake Nagaya, Daisuke Kawaguchi, Toshiki Yui, Chiaki Sasaoka, Jun Kojima +1 more | 2023-11-07 |
| 11784039 | Method for manufacturing gallium nitride semiconductor device | Jun Kojima, Chiaki Sasaoka, Shoichi Onda, Masatake Nagaya, Daisuke Kawaguchi | 2023-10-10 |
| 11107892 | SiC epitaxial wafer and method for producing same | Keisuke Fukada, Naoto ISHIBASHI, Akira Bando, Masahiko Ito, Isaho Kamata +7 more | 2021-08-31 |
| 10896831 | Film forming apparatus | Kunihiko Suzuki, Naohisa Ikeya, Keisuke Fukada, Masahiko Ito, Isaho Kamata +6 more | 2021-01-19 |
| 10745824 | Film forming apparatus | Kunihiko Suzuki, Naohisa Ikeya, Masayoshi Yajima, Hiroaki Fujibayashi, Hideki Matsuura +1 more | 2020-08-18 |
| 10262863 | Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus | Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hideyuki Uehigashi +4 more | 2019-04-16 |
| 9644286 | Silicon carbide single crystal manufacturing apparatus | — | 2017-05-09 |
| 9328431 | Apparatus for manufacturing a silicon carbide single crystal comprising a mounting portion and a purge gas introduction system | Yuuichirou Tokuda | 2016-05-03 |
| 8882911 | Apparatus for manufacturing silicon carbide single crystal | Yuuichirou Tokuda, Jun Kojima | 2014-11-11 |
| 7217323 | Equipment and method for manufacturing silicon carbide single crystal | Naohiro Sugiyama, Yasuo Kitou, Emi Makino, Kouki Futatsuyama, Atsuto Okamoto | 2007-05-15 |
| 7147714 | Manufacturing method of silicon carbide single crystals | Masami Naito, Fusao Hirose, Shoichi Onda | 2006-12-12 |
| 7112242 | Manufacturing method for producing silicon carbide crystal using source gases | Masao Nagakubo, Shoichi Onda | 2006-09-26 |
| 6830618 | Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same | Masao Nagakubo, Shoichi Onda | 2004-12-14 |
| 6770137 | Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same | Masao Nagakubo, Shoichi Onda | 2004-08-03 |
| 6746787 | Manufacturing method of silicon carbide single crystals | Masami Naito, Fusao Hirose, Shoichi Onda | 2004-06-08 |
| 6670282 | Method and apparatus for producing silicon carbide crystal | Haruyoshi Kuriyama, Hiroyuki Kondo, Shouichi Onda | 2003-12-30 |
| 6451112 | Method and apparatus for fabricating high quality single crystal | Kouki Futatsuyama, Shoichi Onda, Fusao Hirose, Emi Oguri, Naohiro Sugiyama +1 more | 2002-09-17 |
| 6214108 | Method of manufacturing silicon carbide single crystal and silicon carbide single crystal manufactured by the same | Atsuto Okamoto, Naohiro Sugiyama, Toshihiko Tani, Nobuo Kamiya, Hiroaki Wakayama +7 more | 2001-04-10 |
| 6057558 | Silicon carbide semiconductor device and manufacturing method thereof | Tsuyoshi Yamamoto, Rajesh Kumar, Kunihiko Hara, Yuichi Takeuchi, Masami Naito | 2000-05-02 |
| 6054752 | Semiconductor device | Yuichi Takeuchi, Tsuyoshi Yamamoto, Rajesh Kumar, Mitsuhiro Kataoka | 2000-04-25 |
| 6020600 | Silicon carbide semiconductor device with trench | Takeshi Miyajima, Norihito Tokura, Hiroo Fuma | 2000-02-01 |
| 5976936 | Silicon carbide semiconductor device | Takeshi Miyajima, Norihito Tokura, Hiroo Fuma | 1999-11-02 |
| 5915180 | Process for producing a semiconductor device having a single thermal oxidizing step | Norihito Tokura, Takeshi Miyajima, Hiroo Fuma, Hiroyuki Kano | 1999-06-22 |
| 5723376 | Method of manufacturing SiC semiconductor device having double oxide film formation to reduce film defects | Yuuichi Takeuchi, Takeshi Miyajima, Norihito Tokura | 1998-03-03 |