Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11107892 | SiC epitaxial wafer and method for producing same | Keisuke Fukada, Naoto ISHIBASHI, Akira Bando, Masahiko Ito, Isaho Kamata +7 more | 2021-08-31 |
| 10896831 | Film forming apparatus | Kunihiko Suzuki, Naohisa Ikeya, Keisuke Fukada, Masahiko Ito, Isaho Kamata +6 more | 2021-01-19 |
| 10584417 | Film forming apparatus, susceptor, and film forming method | Hideki Ito, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Hiroaki Fujibayashi +2 more | 2020-03-10 |
| 10262863 | Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus | Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hideyuki Uehigashi +4 more | 2019-04-16 |
| 9879359 | Silicon carbide semiconductor film-forming apparatus and film-forming method using the same | Hiroaki Fujibayashi, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hideki Ito +2 more | 2018-01-30 |
| 9873941 | Film-forming manufacturing apparatus and method | Hideki Ito, Toshiro Tsumori, Kunihiko Suzuki, Hidekazu Tsuchida, Isaho Kamata +4 more | 2018-01-23 |
| 9598792 | Film-forming apparatus and film-forming method | Kunihiko Suzuki, Hideki Ito, Naohisa Ikeya, Hidekazu Tsuchida, Isaho Kamata +4 more | 2017-03-21 |
| 9570337 | Film formation apparatus and film formation method | Hideki Ito, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito, Hiroaki Fujibayashi +2 more | 2017-02-14 |
| 9518322 | Film formation apparatus and film formation method | Hideki Ito, Kunihiko Suzuki, Hidekazu Tsuchida, Isaho Kamata, Masahiko Ito +3 more | 2016-12-13 |
| 9337276 | Silicon carbide semiconductor device having junction barrier Schottky diode | Hideyuki Uehigashi, Tomoo MORINO | 2016-05-10 |
| 8980003 | Method of manufacturing silicon carbide single crystal | Hiroki Watanabe, Yasuo Kitou | 2015-03-17 |
| 8704340 | Stacked single crystal compound semiconductor substrates | Hiroaki Fujibayashi, Nobuyuki Ooya | 2014-04-22 |
| 8507921 | Single crystal compound semiconductor substrate | Hiroaki Fujibayashi, Nobuyuki Ooya | 2013-08-13 |
| RE43840 | Silicon carbide semiconductor device | Mitsuhiro Kataoka, Yuuichi Takeuchi, Rajesh Kumar, Hiroyuki Matsunami, Tsunenobu Kimoto | 2012-12-04 |
| 7147714 | Manufacturing method of silicon carbide single crystals | Kazukuni Hara, Fusao Hirose, Shoichi Onda | 2006-12-12 |
| 6890600 | SiC single crystal, method for manufacturing SiC single crystal, SiC wafer having an epitaxial film, method for manufacturing SiC wafer having an epitaxial film, and SiC electronic device | Daisuke Nakamura, Tadashi Ito, Hiroyuki Kondo | 2005-05-10 |
| 6853006 | Silicon carbide semiconductor device | Mitsuhiro Kataoka, Yuuichi Takeuchi, Rajesh Kumar, Hiroyuki Matsunami, Tsunenobu Kimoto | 2005-02-08 |
| 6746787 | Manufacturing method of silicon carbide single crystals | Kazukuni Hara, Fusao Hirose, Shoichi Onda | 2004-06-08 |
| 6297100 | Method of manufacturing silicon carbide semiconductor device using active and inactive ion species | Rajesh Kumar, Hiroki Nakamura, Yuichi Takeuchi | 2001-10-02 |
| 6057558 | Silicon carbide semiconductor device and manufacturing method thereof | Tsuyoshi Yamamoto, Rajesh Kumar, Kunihiko Hara, Yuichi Takeuchi, Kazukuni Hara | 2000-05-02 |
| 5714781 | Semiconductor device having a gate electrode in a grove and a diffused region under the grove | Tsuyoshi Yamamoto, Takeshi Fukazawa | 1998-02-03 |