TM

Takeshi Miyajima

DE Denso: 19 patents #459 of 11,792Top 4%
HC Hitachi Construction Machinery Co.: 5 patents #242 of 1,234Top 20%
NC Nippondenso Co.: 5 patents #465 of 3,479Top 15%
TL Toyota Central R&D Labs: 1 patents #823 of 1,657Top 50%
TO Toyota: 1 patents #15,335 of 26,838Top 60%
Overall (All Time): #123,931 of 4,157,543Top 3%
30
Patents All Time

Issued Patents All Time

Showing 1–25 of 30 patents

Patent #TitleCo-InventorsDate
11225217 Airbag apparatus Kenji Kokubu, Masatoshi Otake, Masayuki Tado 2022-01-18
9368575 Semiconductor device having super junction structure and method for manufacturing the same 2016-06-14
8659082 Method for manufacturing a semiconductor device having super junction structure 2014-02-25
8421154 Semiconductor device having super junction structure and method for manufacturing the same 2013-04-16
8106453 Semiconductor device having super junction structure 2012-01-31
8018028 Semiconductor device and method for manufacturing the same 2011-09-13
8008768 Semiconductor device having heat radiating configuration 2011-08-30
7932132 Semiconductor device and method of manufacturing the same 2011-04-26
7910411 Semiconductor device and method for manufacturing the same 2011-03-22
7858475 Method for manufacturing a vertical transistor that includes a super junction structure Hitoshi Yamaguchi, Nozomu Akagi 2010-12-28
7635622 Method for manufacturing a vertical transistor that includes a super junction structure Hitoshi Yamaguchi 2009-12-22
6809348 Semiconductor device and method for manufacturing the same Mikimasa Suzuki, Akira Kuroyanagi, Shoji Miura, Yutaka Tomatsu, Fuminari Suzuki 2004-10-26
6703707 Semiconductor device having radiation structure Kuniaki Mamitsu, Yasuyoshi Hirai, Kazuhito Nomura, Yutaka Fukuda, Kazuo Kajimoto +2 more 2004-03-09
6548386 Method for forming and patterning film Ichiharu Kondo, Yasuo Ishihara, Shuichi Nagahaka 2003-04-15
6476458 Semiconductor device capable of enhancing a withstand voltage at a peripheral region around an element in comparison with a withstand voltage at the element 2002-11-05
6133120 Boron-doped p-type single crystal silicon carbide semiconductor and process for preparing same Norihito Tokura, Atsuo Fukumoto, Hidemitsu Hayashi 2000-10-17
6133587 Silicon carbide semiconductor device and process for manufacturing same Yuichi Takeuchi, Norihito Tokura, Hiroo Fuma, Toshio Murata, Takamasa Suzuki +1 more 2000-10-17
6020600 Silicon carbide semiconductor device with trench Norihito Tokura, Kazukuni Hara, Hiroo Fuma 2000-02-01
5998268 Manufacturing method of semiconductor device with a groove Yutaka Tomatsu, Manabu Koike, Ryosuke Inoshita 1999-12-07
5976936 Silicon carbide semiconductor device Norihito Tokura, Kazukuni Hara, Hiroo Fuma 1999-11-02
5915180 Process for producing a semiconductor device having a single thermal oxidizing step Kazukuni Hara, Norihito Tokura, Hiroo Fuma, Hiroyuki Kano 1999-06-22
5744826 Silicon carbide semiconductor device and process for its production Yuichi Takeuchi, Norihito Tokura, Hiroo Fuma, Toshio Murata 1998-04-28
5723376 Method of manufacturing SiC semiconductor device having double oxide film formation to reduce film defects Yuuichi Takeuchi, Kazukuni Hara, Norihito Tokura 1998-03-03
5696396 Semiconductor device including vertical MOSFET structure with suppressed parasitic diode operation Norihito Tokura, Kunihiko Hara 1997-12-09
5005420 Ultrasonic method for measurement of depth of surface opening flaw in solid mass 1991-04-09