Issued Patents All Time
Showing 1–25 of 43 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8333007 | Method for manufacturing motor device for a fuel pump | Kiyonori Moroto, Tadashi Hazama | 2012-12-18 |
| 8076718 | Insulated gate semiconductor device and method for producing the same | Hidefumi Takaya, Kimimori Hamada, Kyosuke Miyagi, Yasushi Okura, Norihito Tokura | 2011-12-13 |
| 7859165 | Fuel pump and motor device for the same | Kiyonori Moroto, Tadashi Hazama | 2010-12-28 |
| 7586151 | Insulated gate semiconductor device | Hidefumi Takaya, Yasushi Okura, Norihito Tokura | 2009-09-08 |
| 7470953 | Insulated gate type semiconductor device and manufacturing method thereof | Hidefumi Takaya, Kimimori Hamada, Yasushi Okura, Norihito Tokura | 2008-12-30 |
| 7459118 | Heated medium supplying method and structure for secondary molding of resin molded component | Hidehisa Nasu, Masato Ichikawa, Akira Sahashi | 2008-12-02 |
| 7438842 | Method of manufacturing resin molding and change-over device for changing over between heating medium and resin material in process of secondary forming | Hidehisa Nasu, Masato Ichikawa, Akira Sahashi | 2008-10-21 |
| 7354829 | Trench-gate transistor with ono gate dielectric and fabrication process therefor | Takaaki Aoki, Yutaka Tomatsu, Mikimasa Suzuki, Hajime Soga | 2008-04-08 |
| 7300274 | Change-over device for changing over between a heating medium and a resin material at a time of a secondary forming | Hidehisa Nasu, Masato Ichikawa, Akira Sahashi | 2007-11-27 |
| 7064033 | Semiconductor device and method of manufacturing same | Yoshifumi Okabe, Masami Yamaoka | 2006-06-20 |
| 6972459 | Metal oxide semiconductor transistor having a nitrogen cluster containing layer embedded in the substrate | Shoji Miura, Mikimasa Suzuki, Yoshitaka Nakano | 2005-12-06 |
| 6949434 | Method of manufacturing a vertical semiconductor device | Yoshifumi Okabe, Masami Yamaoka | 2005-09-27 |
| 6946711 | Semiconductor device | Mikimasa Suzuki, Shoji Miura, Noriyuki Iwamori, Takashi Suzuki | 2005-09-20 |
| 6903417 | Power semiconductor device | Yoshifumi Okabe, Masami Yamaoka | 2005-06-07 |
| 6864532 | Semiconductor device and method for manufacturing the same | Takaaki Aoki, Mikimasa Suzuki, Takafumi Arakawa, Yukio Tsuzuki | 2005-03-08 |
| 6809348 | Semiconductor device and method for manufacturing the same | Mikimasa Suzuki, Takeshi Miyajima, Shoji Miura, Yutaka Tomatsu, Fuminari Suzuki | 2004-10-26 |
| 6649478 | Semiconductor device and method of manufacturing same | Yoshifumi Okabe, Masami Yamaoka | 2003-11-18 |
| 6525400 | Semiconductor memory device and method of manufacturing the same | Tetsuo Fujii, Minekazu Sakai | 2003-02-25 |
| 6498366 | Semiconductor device that exhibits decreased contact resistance between substrate and drain electrode | Yoshifumi Okabe, Masami Yamaoka | 2002-12-24 |
| 6469345 | Semiconductor device and method for manufacturing the same | Takaaki Aoki, Yutaka Tomatsu, Mikimasa Suzuki, Hajime Soga | 2002-10-22 |
| 6373093 | Semiconductor memory device and method of manufacturing the same | Tetsuo Fujii, Minekazu Sakai | 2002-04-16 |
| 6365458 | Semiconductor memory device and method of manufacturing the same | Tetsuo Fujii, Minekazu Sakai | 2002-04-02 |
| 6137156 | Semiconductor device employing silicon nitride layers with varied hydrogen concentration | Yuji Ichikawa, Yasushi Tanaka, Yasuo Souki, Ryouichi Kubokoya, Hirohito Shioya | 2000-10-24 |
| 5994187 | Method of manufacturing a vertical semiconductor device | Yoshifumi Okabe, Masami Yamaoka | 1999-11-30 |
| 5877095 | Method of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogen | Muneo Tamura, Takeshi Yamauchi, Katuhide Niwa, Takeshi Fukazawa | 1999-03-02 |