Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12297562 | Silicon carbide ingot including screw dislocations | Norihiro HOSHINO, Kiyoshi BETSUYAKU, Hidekazu Tsuchida, Takeshi Okamoto, Akiyoshi HORIAI | 2025-05-13 |
| 12281410 | Method and apparatus for manufacturing silicon carbide single crystal, and silicon carbide single crystal ingot | Norihiro HOSHINO, Hidekazu Tsuchida, Takahiro KANDA, Takeshi Okamoto | 2025-04-22 |
| 12252808 | Silicon carbide single crystal wafer, and methods for manufacturing silicon carbide single crystal ingot and the silicon carbide single crystal wafer | Hidekazu Tsuchida, Norihiro HOSHINO, Yuichiro Tokuda, Takeshi Okamoto | 2025-03-18 |
| 12071709 | Methods for manufacturing silicon carbide single crystal ingot and silicon carbide single crystal wafer | Hidekazu Tsuchida, Norihiro HOSHINO, Yuichiro Tokuda, Takeshi Okamoto | 2024-08-27 |
| 11906569 | Semiconductor wafer evaluation apparatus and semiconductor wafer manufacturing method | Koichi Murata, Hidekazu Tsuchida, Akira Miyasaka | 2024-02-20 |
| 11846040 | Silicon carbide single crystal | Yuichiro Tokuda, Hideyuki Uehigashi, Norihiro HOSHINO, Hidekazu Tsuchida | 2023-12-19 |
| 11107892 | SiC epitaxial wafer and method for producing same | Keisuke Fukada, Naoto ISHIBASHI, Akira Bando, Masahiko Ito, Hidekazu Tsuchida +7 more | 2021-08-31 |
| 10896831 | Film forming apparatus | Kunihiko Suzuki, Naohisa Ikeya, Keisuke Fukada, Masahiko Ito, Hidekazu Tsuchida +6 more | 2021-01-19 |
| 10584417 | Film forming apparatus, susceptor, and film forming method | Hideki Ito, Hidekazu Tsuchida, Masahiko Ito, Masami Naito, Hiroaki Fujibayashi +2 more | 2020-03-10 |
| 10262863 | Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus | Keisuke Fukada, Masahiko Ito, Hidekazu Tsuchida, Hideyuki Uehigashi, Hiroaki Fujibayashi +4 more | 2019-04-16 |
| 10181517 | Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic device | Takeshi Okamoto, Hiroyuki Kondo, Takashi Kanemura, Shinichiro Miyahara, Yasuhiro Ebihara +3 more | 2019-01-15 |
| 9879359 | Silicon carbide semiconductor film-forming apparatus and film-forming method using the same | Hiroaki Fujibayashi, Masami Naito, Masahiko Ito, Hidekazu Tsuchida, Hideki Ito +2 more | 2018-01-30 |
| 9873941 | Film-forming manufacturing apparatus and method | Hideki Ito, Toshiro Tsumori, Kunihiko Suzuki, Hidekazu Tsuchida, Masahiko Ito +4 more | 2018-01-23 |
| 9598792 | Film-forming apparatus and film-forming method | Kunihiko Suzuki, Hideki Ito, Naohisa Ikeya, Hidekazu Tsuchida, Masahiko Ito +4 more | 2017-03-21 |
| 9570337 | Film formation apparatus and film formation method | Hideki Ito, Hidekazu Tsuchida, Masahiko Ito, Masami Naito, Hiroaki Fujibayashi +2 more | 2017-02-14 |
| 9518322 | Film formation apparatus and film formation method | Hideki Ito, Kunihiko Suzuki, Hidekazu Tsuchida, Masahiko Ito, Hiroaki Fujibayashi +3 more | 2016-12-13 |
| 8815711 | Manufacturing apparatus and method for semiconductor device and cleaning method of manufacturing apparatus for semiconductor | Kunihiko Suzuki, Hideki Ito, Hidekazu Tsuchida, Masahiko Ito | 2014-08-26 |
| 8716718 | Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate | Kenji Momose, Michiya Odawara, Keiichi Matsuzawa, Hajime Okumura, Kazutoshi Kojima +2 more | 2014-05-06 |
| 8455269 | Method for recovering an on-state forward voltage and, shrinking stacking faults in bipolar semiconductor devices, and the bipolar semiconductor devices | Toshiyuki Miyanagi, Hidekazu Tsuchida, Yoshitaka Sugawara, Koji Nakayama, Ryosuke Ishii | 2013-06-04 |
| 8367510 | Process for producing silicon carbide semiconductor device | Toshiyuki Miyanagi, Hidekazu Tsuchida, Masahiro Nagano, Yoshitaka Sugawara, Koji Nakayama +1 more | 2013-02-05 |
| 8293623 | Epitaxial SiC single crystal substrate and method of manufacture of epitaxial SiC single crystal substrate | Kenji Momose, Michiya Odawara, Keiichi Matsuzawa, Hajime Okumura, Kazutoshi Kojima +2 more | 2012-10-23 |
| 8154026 | Silicon carbide bipolar semiconductor device | Ryosuke Ishii, Koji Nakayama, Yoshitaka Sugawara, Toshiyuki Miyanagi, Hidekazu Tsuchida +1 more | 2012-04-10 |
| 7960257 | Silicon carbide semiconductor device and manufacturing method therefor | Koji Nakayama, Yoshitaka Sugawara, Katsunori Asano, Hidekazu Tsuchida, Toshiyuki Miyanagi +1 more | 2011-06-14 |
| 7960737 | Silicon carbide semiconductor device and manufacturing method therefor | Koji Nakayama, Yoshitaka Sugawara, Katsunori Asano, Hidekazu Tsuchida, Toshiyuki Miyanagi +1 more | 2011-06-14 |
| 7960738 | Silicon carbide semiconductor device and manufacturing method therefor | Koji Nakayama, Yoshitaka Sugawara, Katsunori Asano, Hidekazu Tsuchida, Toshiyuki Miyanagi +1 more | 2011-06-14 |