Issued Patents All Time
Showing 26–37 of 37 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5362684 | Non-monocrystalline silicon carbide semiconductor, process of production thereof, and semiconductor device employing the same | Keishi Saito, Tatsuyuki Aoike, Yuzo Koda | 1994-11-08 |
| 5358811 | Electrophotographic method using an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and insulating toner having a volume average particle size of 4.5 to 9.0 micron | Koji Yamazaki, Tatsuyuki Aoike, Toshiyuki Ehara, Takehito Yoshino, Hirokazu Otoshi | 1994-10-25 |
| 5284525 | Solar cell | Keishi Saito, Tatsuyuki Aoike, Yasushi Fujioka, Mitsuyuki Niwa, Yuzo Kohda | 1994-02-08 |
| 5281541 | Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method | Keishi Saito, Tatsuyuki Aoike, Mitsuyuki Niwa, Yuzo Koda | 1994-01-25 |
| 5130170 | Microwave PCVD method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation | Masahiro Kanai, Jinsho Matsuyama, Katsumi Nakagawa, Yasushi Fujioka, Tetsuya Takei +1 more | 1992-07-14 |
| 5114770 | Method for continuously forming functional deposited films with a large area by a microwave plasma CVD method | Hiroshi Echizen, Yasushi Fujioka, Katsumi Nakagawa, Masahiro Kanai, Jinsho Matsuyama +1 more | 1992-05-19 |
| 5087542 | Electrophotographic image-forming method wherein an amorphous silicon light receiving member with a latent image support layer and a developed image support layer and fine particle insulating toner are used | Koji Yamazaki, Tatsuyuki Aoike, Toshiyuki Ehara, Takehito Yoshino, Hirokazu Otoshi | 1992-02-11 |
| 4981766 | Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of a non-single-crystal silicon material | Tatsuyuki Aoike, Masafumi Sano, Takehito Yoshino, Hiroaki Niino | 1991-01-01 |
| 4906542 | Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material | Tatsuyuki Aoike, Masafumi Sano, Takehito Yoshino, Hiroaki Niino | 1990-03-06 |
| 4906543 | Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material | Tatsuyuki Aoike, Masafumi Sano, Takehito Yoshino, Hiroaki Niino | 1990-03-06 |
| 4886723 | Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material | Tatsuyuki Aoike, Masafumi Sano, Takehito Yoshino, Hiroaki Niino | 1989-12-12 |
| 4882251 | Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material | Tatsuyuki Aoike, Masafumi Sano, Takehito Yoshino, Hiroaki Niino | 1989-11-21 |