| 5908312 |
Semiconductor device fabrication |
Kin P. Cheung, Chun-Ting Liu, Yi Ma, Pradip K. Roy |
1999-06-01 |
| 5851922 |
Process for fabricating a device using nitrogen implantation into silicide layer |
Joze Bevk, Matthias Fuertsch, George E. Georgiou |
1998-12-22 |
| 5642014 |
Self-powered device |
— |
1997-06-24 |
| 5373180 |
Planar isolation technique for integrated circuits |
William T. Lynch, Lalita Manchanda, Mark R. Pinto, Sheila Vaidya |
1994-12-13 |
| 5063422 |
Devices having shallow junctions |
Joseph Lebowitz, Ruichen Liu, William T. Lynch |
1991-11-05 |
| 4935376 |
Making silicide gate level runners |
Kuo-Hua Lee, Chih-Yuan Lu, Janmye Sung |
1990-06-19 |
| 4825278 |
Radiation hardened semiconductor devices |
William T. Lynch, Lalita Manchanda |
1989-04-25 |
| 4554726 |
CMOS Integrated circuit technology utilizing dual implantation of slow and fast diffusing donor ions to form the n-well |
Louis C. Parrillo |
1985-11-26 |