GC

George K. Celler

AT AT&T: 7 patents #2,615 of 18,772Top 15%
ST S.O.I. Tec Silicon On Insulator Technologies: 5 patents #32 of 155Top 25%
BL Bell Telephone Laboratories: 4 patents #115 of 1,445Top 8%
WC Western Electric Company: 3 patents #40 of 531Top 8%
SO Soitec: 2 patents #91 of 259Top 40%
RJ Rutgers, The State University Of New Jersey: 1 patents #651 of 1,498Top 45%
AG Agere Systems Guardian: 1 patents #274 of 810Top 35%
Overall (All Time): #184,776 of 4,157,543Top 5%
23
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
9761493 Thin epitaxial silicon carbide wafer fabrication 2017-09-12
8299485 Substrates for monolithic optical circuits and electronic circuits 2012-10-30
8148242 Oxidation after oxide dissolution Oleg Kononchuk 2012-04-03
7968911 Relaxation of a strained layer using a molten layer 2011-06-28
7956436 Method of forming a device wafer with recyclable support 2011-06-07
7605055 Wafer with diamond layer 2009-10-20
7605054 Method of forming a device wafer with recyclable support 2009-10-20
7585792 Relaxation of a strained layer using a molten layer 2009-09-08
6388290 Single crystal silicon on polycrystalline silicon integrated circuits Yves Chabal 2002-05-14
5656399 Process for making an x-ray mask Joseph A. Abate, Jerry Vhi-Yi Guo 1997-08-12
5482802 Material removal with focused particle beams Lloyd R. Harriott, Ratnaji R. Kola 1996-01-09
5051326 X-Ray lithography mask and devices made therewith Lee E. Trimble 1991-09-24
4835113 Fabrication of dielectrically isolated devices with buried conductive layers Lee E. Trimble 1989-05-30
4676841 Fabrication of dielectrically isolated devices utilizing buried oxygen implant and subsequent heat treatment at temperatures above 1300.degree. C . 1987-06-30
4581814 Process for fabricating dielectrically isolated devices utilizing heating of the polycrystalline support layer to prevent substrate deformation Pradip K. Roy, Donald G. Schimmel, Lee E. Trimble 1986-04-15
4497683 Process for producing dielectrically isolated silicon devices McDonald Robinson 1985-02-05
4494303 Method of making dielectrically isolated silicon devices David Lischner, McDonald Robinson 1985-01-22
4461670 Process for producing silicon devices David Lischner, McDonald Robinson 1984-07-24
4406709 Method of increasing the grain size of polycrystalline materials by directed energy-beams Harry J. Leamy, Lee E. Trimble 1983-09-27
4258078 Metallization for integrated circuits Thomas E. Seidel 1981-03-24
4249962 Method of removing contaminating impurities from device areas in a semiconductor wafer 1981-02-10
4240843 Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing Gabriel L. Miller 1980-12-23
4234358 Patterned epitaxial regrowth using overlapping pulsed irradiation Lionel C. Kimerling, Harry J. Leamy, John M. Poate, George Arthur Rozgonyi 1980-11-18