Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9761493 | Thin epitaxial silicon carbide wafer fabrication | — | 2017-09-12 |
| 8299485 | Substrates for monolithic optical circuits and electronic circuits | — | 2012-10-30 |
| 8148242 | Oxidation after oxide dissolution | Oleg Kononchuk | 2012-04-03 |
| 7968911 | Relaxation of a strained layer using a molten layer | — | 2011-06-28 |
| 7956436 | Method of forming a device wafer with recyclable support | — | 2011-06-07 |
| 7605055 | Wafer with diamond layer | — | 2009-10-20 |
| 7605054 | Method of forming a device wafer with recyclable support | — | 2009-10-20 |
| 7585792 | Relaxation of a strained layer using a molten layer | — | 2009-09-08 |
| 6388290 | Single crystal silicon on polycrystalline silicon integrated circuits | Yves Chabal | 2002-05-14 |
| 5656399 | Process for making an x-ray mask | Joseph A. Abate, Jerry Vhi-Yi Guo | 1997-08-12 |
| 5482802 | Material removal with focused particle beams | Lloyd R. Harriott, Ratnaji R. Kola | 1996-01-09 |
| 5051326 | X-Ray lithography mask and devices made therewith | Lee E. Trimble | 1991-09-24 |
| 4835113 | Fabrication of dielectrically isolated devices with buried conductive layers | Lee E. Trimble | 1989-05-30 |
| 4676841 | Fabrication of dielectrically isolated devices utilizing buried oxygen implant and subsequent heat treatment at temperatures above 1300.degree. C . | — | 1987-06-30 |
| 4581814 | Process for fabricating dielectrically isolated devices utilizing heating of the polycrystalline support layer to prevent substrate deformation | Pradip K. Roy, Donald G. Schimmel, Lee E. Trimble | 1986-04-15 |
| 4497683 | Process for producing dielectrically isolated silicon devices | McDonald Robinson | 1985-02-05 |
| 4494303 | Method of making dielectrically isolated silicon devices | David Lischner, McDonald Robinson | 1985-01-22 |
| 4461670 | Process for producing silicon devices | David Lischner, McDonald Robinson | 1984-07-24 |
| 4406709 | Method of increasing the grain size of polycrystalline materials by directed energy-beams | Harry J. Leamy, Lee E. Trimble | 1983-09-27 |
| 4258078 | Metallization for integrated circuits | Thomas E. Seidel | 1981-03-24 |
| 4249962 | Method of removing contaminating impurities from device areas in a semiconductor wafer | — | 1981-02-10 |
| 4240843 | Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing | Gabriel L. Miller | 1980-12-23 |
| 4234358 | Patterned epitaxial regrowth using overlapping pulsed irradiation | Lionel C. Kimerling, Harry J. Leamy, John M. Poate, George Arthur Rozgonyi | 1980-11-18 |