Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Single crystal silicon on polycrystalline silicon integrated circuits

Single crystal silicon on polycrystalline silicon integrated circuits

US Patent 6388290 · Granted May 14, 2002

Estimated economic value: $3,798,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods for depositing a conformal metal or metalloid silicon nitride film2024
Storing molecule within porous materials with a surface molecular barrier layer2021
Thin epitaxial silicon carbide wafer fabrication2017
Substrates for monolithic optical circuits and electronic circuits2012
Oxidation after oxide dissolution2012
Relaxation of a strained layer using a molten layer2011
Method of forming a device wafer with recyclable support2011
Method of forming a device wafer with recyclable support2009
Wafer with diamond layer2009
Relaxation of a strained layer using a molten layer2009
Process for fabricating a semiconductor device having an insulating layer formed2007
Semiconductor device using an insulating layer having a seed layer2004