Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Fabrication of dielectrically isolated devices with buried conductive layers

Fabrication of dielectrically isolated devices with buried conductive layers

US Patent 4835113 · Granted May 30, 1989

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Thin epitaxial silicon carbide wafer fabrication2017
Substrates for monolithic optical circuits and electronic circuits2012
Oxidation after oxide dissolution2012
Relaxation of a strained layer using a molten layer2011
Method of forming a device wafer with recyclable support2011
Method of forming a device wafer with recyclable support2009
Wafer with diamond layer2009
Relaxation of a strained layer using a molten layer2009
Single crystal silicon on polycrystalline silicon integrated circuits2002
Process for device fabrication using a variable transmission aperture2000
Process for making an x-ray mask1997
Material removal with focused particle beams1996