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USPTO Patent Rankings Data through Dec 31, 2025
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Mohammed Anjum — 19 Patents

AMD: 14 patents #900 of 9,280Top 10%
Micron: 5 patents #2,442 of 6,374Top 40%
Boise, ID: #517 of 3,546 inventorsTop 15%
Idaho: #745 of 8,810 inventorsTop 9%
Overall (All Time): #229,345 of 4,157,543Top 6%
19 Patents All Time
Mohammed Anjum has been granted 19 US patents while listed as an inventor at AMD. The first was granted in 1992 and the most recent in November 2002. Mohammed Anjum ranks #229,345 of 4,157,543 US inventors in our database (top 5.5%). Patent records list Mohammed Anjum in Boise, ID, US.

Issued Patents All Time

Showing 1–19 of 19 patents

Patent #TitleCo-InventorsDateApprox Value ⓘ
6482719 Semiconductor field region implant methodology Alan L. Stuber, Maung H. Kyaw 2002-11-19 $1,532,000
6331458 Active region implant methodology using indium to enhance short channel performance of a surface channel PMOS device Alan L. Stuber, Ibrahim K. Burki 2001-12-18 $8,747,000
5965932 Contamination free source for shallow low energy junction implants using implanted molecules containing titanium and boron Gurtej S. Sandhu 1999-10-12 $21,791,000
5891791 Contamination free source for shallow low energy junction implants Gurtej S. Sandhu 1999-04-06 $11,759,000
5661335 Semicondutor having selectively enhanced field oxide areas and method for producing same Ibrahim K. Burki, Craig W. Christian 1997-08-26 $18,351,000
5633177 Method for producing a semiconductor gate conductor having an impurity migration barrier 1997-05-27 $15,117,000
5593907 Large tilt angle boron implant methodology for reducing subthreshold current in NMOS integrated circuit devices Klaus H. Koop, Maung H. Kyaw 1997-01-14 $18,167,000
5550084 Integrated circuit fabrication using a metal silicide having a sputterdeposited metal nitride layer Ibrahim K. Burki, Craig W. Christian 1996-08-27 $4,675,000
5470794 Method for forming a silicide using ion beam mixing Ibrahim K. Burki, Craig W. Christian 1995-11-28 $4,822,000
5471293 Method and device for determining defects within a crystallographic substrate John K. Lowell, Valerie A. Wenner, Norman L. Armour, Maung H. Kyaw 1995-11-28 $4,822,000
5444024 Method for low energy implantation of argon to control titanium silicide formation Ibrahim K. Burki, Craig W. Christian 1995-08-22 $4,378,000
5429972 Method of fabricating a capacitor with a textured polysilicon interface and an enhanced dielectric Klaus H. Koop, Maung H. Kyaw 1995-07-04
5401674 Germanium implant for use with ultra-shallow junctions Ibrahim K. Burki, Craig W. Christian 1995-03-28 $15,499,000
5393676 Method of fabricating semiconductor gate electrode with fluorine migration barrier Ibrahim K. Burki, Craig W. Christian 1995-02-28 $32,902,000
5372951 Method of making a semiconductor having selectively enhanced field oxide areas Ibrahim K. Burki, Craig W. Christian 1994-12-13 $25,166,000
5360749 Method of making semiconductor structure with germanium implant for reducing short channel effects and subthreshold current near the substrate surface Klaus H. Koop, Maung H. Kyaw 1994-11-01 $14,385,000
5358894 Oxidation enhancement in narrow masked field regions of a semiconductor wafer Pierre C. Fazan, Viju K. Mathews, Gurtej S. Sandhu, Hiang C. Chan 1994-10-25 $8,160,000
5258637 Semiconductor devices produced according to a method which reduces contact resistance at silicide/active area interfaces Gurtej S. Sandhu 1993-11-02 $10,738,000
5108954 Method of reducing contact resistance at silicide/active area interfaces and semiconductor devices produced according to the method Gurtej S. Sandhu 1992-04-28 $3,380,000