| 6482719 |
Semiconductor field region implant methodology |
Alan L. Stuber, Maung H. Kyaw |
2002-11-19 |
| 6331458 |
Active region implant methodology using indium to enhance short channel performance of a surface channel PMOS device |
Alan L. Stuber, Ibrahim K. Burki |
2001-12-18 |
| 5965932 |
Contamination free source for shallow low energy junction implants using implanted molecules containing titanium and boron |
Gurtej S. Sandhu |
1999-10-12 |
| 5891791 |
Contamination free source for shallow low energy junction implants |
Gurtej S. Sandhu |
1999-04-06 |
| 5661335 |
Semicondutor having selectively enhanced field oxide areas and method for producing same |
Ibrahim K. Burki, Craig W. Christian |
1997-08-26 |
| 5633177 |
Method for producing a semiconductor gate conductor having an impurity migration barrier |
— |
1997-05-27 |
| 5593907 |
Large tilt angle boron implant methodology for reducing subthreshold current in NMOS integrated circuit devices |
Klaus H. Koop, Maung H. Kyaw |
1997-01-14 |
| 5550084 |
Integrated circuit fabrication using a metal silicide having a sputterdeposited metal nitride layer |
Ibrahim K. Burki, Craig W. Christian |
1996-08-27 |
| 5470794 |
Method for forming a silicide using ion beam mixing |
Ibrahim K. Burki, Craig W. Christian |
1995-11-28 |
| 5471293 |
Method and device for determining defects within a crystallographic substrate |
John K. Lowell, Valerie A. Wenner, Norman L. Armour, Maung H. Kyaw |
1995-11-28 |
| 5444024 |
Method for low energy implantation of argon to control titanium silicide formation |
Ibrahim K. Burki, Craig W. Christian |
1995-08-22 |
| 5429972 |
Method of fabricating a capacitor with a textured polysilicon interface and an enhanced dielectric |
Klaus H. Koop, Maung H. Kyaw |
1995-07-04 |
| 5401674 |
Germanium implant for use with ultra-shallow junctions |
Ibrahim K. Burki, Craig W. Christian |
1995-03-28 |
| 5393676 |
Method of fabricating semiconductor gate electrode with fluorine migration barrier |
Ibrahim K. Burki, Craig W. Christian |
1995-02-28 |
| 5372951 |
Method of making a semiconductor having selectively enhanced field oxide areas |
Ibrahim K. Burki, Craig W. Christian |
1994-12-13 |
| 5360749 |
Method of making semiconductor structure with germanium implant for reducing short channel effects and subthreshold current near the substrate surface |
Klaus H. Koop, Maung H. Kyaw |
1994-11-01 |
| 5358894 |
Oxidation enhancement in narrow masked field regions of a semiconductor wafer |
Pierre C. Fazan, Viju K. Mathews, Gurtej S. Sandhu, Hiang C. Chan |
1994-10-25 |
| 5258637 |
Semiconductor devices produced according to a method which reduces contact resistance at silicide/active area interfaces |
Gurtej S. Sandhu |
1993-11-02 |
| 5108954 |
Method of reducing contact resistance at silicide/active area interfaces and semiconductor devices produced according to the method |
Gurtej S. Sandhu |
1992-04-28 |
