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Semicondutor having selectively enhanced field oxide areas and method for producing same |
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Integrated circuit fabrication using a metal silicide having a sputterdeposited metal nitride layer |
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Method for forming a silicide using ion beam mixing |
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Method for low energy implantation of argon to control titanium silicide formation |
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Germanium implant for use with ultra-shallow junctions |
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Method of fabricating semiconductor gate electrode with fluorine migration barrier |
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Method of making a semiconductor having selectively enhanced field oxide areas |
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