Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrated circuit fabrication using a metal silicide having a sputterdeposited metal nitride layer

Integrated circuit fabrication using a metal silicide having a sputterdeposited metal nitride layer

US Patent 5550084 · Granted Aug 27, 1996

Estimated economic value: $4,675,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for containing a silicided gate within a sidewall spacer in integrated ci2012
Method for containing a silicided gate within a sidewall spacer in integrated ci2010
Run-to-run control method for automated control of metal deposition processes2008
Floating gate semiconductor component and method of manufacture2006
Control mechanism for matching process parameters in a multi-chamber process too2004
Method and apparatus for run-to-run control of deposition process2003
Advanced process control (APC) of copper thickness for chemical mechanical plana2003
Method and apparatus for reducing deposition variation by modeling post-clean ch2003
Run-to-run etch control by feeding forward measured metal thickness2002
Semiconductor field region implant methodology2002
Method and apparatus for determining measurement frequency based on hardware age2002
Apparatus for filling trenches2002