Issued Patents All Time
Showing 26–50 of 82 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6124172 | Method of making a semiconductor device having source/drain structures with self-aligned heavily-doped and lightly-doped regions | Mark I. Gardner | 2000-09-26 |
| 6124620 | Incorporating barrier atoms into a gate dielectric using gas cluster ion beam implantation | Mark I. Gardner | 2000-09-26 |
| 6121094 | Method of making a semiconductor device with a multi-level gate structure | Mark I. Gardner | 2000-09-19 |
| 6114228 | Method of making a semiconductor device with a composite gate dielectric layer and gate barrier layer | Mark I. Gardner | 2000-09-05 |
| 6111292 | Semiconductor fabrication employing self-aligned sidewall spacers laterally adjacent to a transistor gate | Mark I. Gardner | 2000-08-29 |
| 6110784 | Method of integration of nitrogen bearing high K film | Mark I. Gardner | 2000-08-29 |
| 6107146 | Method of replacing epitaxial wafers in CMOS process | Mark I. Gardner | 2000-08-22 |
| 6106618 | Photoresist application for a circlet wafer | Mark I. Gardner | 2000-08-22 |
| 6100204 | Method of making ultra thin gate oxide using aluminum oxide | Mark I. Gardner, Thomas E. Spikes, Jr. | 2000-08-08 |
| 6099387 | CMP of a circlet wafer using disc-like brake polish pads | Mark I. Gardner | 2000-08-08 |
| 6100147 | Method for manufacturing a high performance transistor with self-aligned dopant profile | Mark I. Gardner | 2000-08-08 |
| 6096659 | Manufacturing process for reducing feature dimensions in a semiconductor | Mark I. Gardner | 2000-08-01 |
| 6096658 | Semiconductor device having in-doped indium oxide etch stop | Mark I. Gardner | 2000-08-01 |
| 6086976 | Semiconductor wafer, handling apparatus, and method | Mark I. Gardner | 2000-07-11 |
| 6078089 | Semiconductor device having cobalt niobate-metal silicide electrode structure and process of fabrication thereof | Mark I. Gardner | 2000-06-20 |
| 6072213 | Transistor having an etchant-scalable channel length and method of making same | Mark I. Gardner | 2000-06-06 |
| 6066519 | Semiconductor device having an outgassed oxide layer and fabrication thereof | Mark I. Gardner | 2000-05-23 |
| 6060767 | Semiconductor device having fluorine bearing sidewall spacers and method of manufacture thereof | Mark I. Gardner | 2000-05-09 |
| 6057584 | Semiconductor device having a tri-layer gate insulating dielectric | Mark I. Gardner, H. Jim Fulford, Jack Lee | 2000-05-02 |
| 6057209 | Semiconductor device having a nitrogen bearing isolation region | Mark I. Gardner | 2000-05-02 |
| 6054364 | Chemical mechanical polishing etch stop for trench isolation | Mark I. Gardner | 2000-04-25 |
| 6051865 | Transistor having a barrier layer below a high permittivity gate dielectric | Mark I. Gardner, Derick J. Wristers | 2000-04-18 |
| 6051487 | Semiconductor device fabrication using a sacrificial plug for defining a region for a gate electrode | Mark I. Gardner, H. Jim Fulford, Robert Paiz | 2000-04-18 |
| 6048766 | Flash memory device having high permittivity stacked dielectric and fabrication thereof | Mark I. Gardner, Thomas E. Spikes, Jr. | 2000-04-11 |
| 6043157 | Semiconductor device having dual gate electrode material and process of fabrication thereof | Mark I. Gardner | 2000-03-28 |