Issued Patents All Time
Showing 26–46 of 46 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6365945 | Submicron semiconductor device having a self-aligned channel stop region and a method for fabricating the semiconductor device using a trim and etch | Michael K. Templeton, Masaaki Higashitani | 2002-04-02 |
| 6362049 | High yield performance semiconductor process flow for NAND flash memory products | Salvatore F. Cagnina, Hao Fang, Kent Kuohua Chang, Masaatzi Higashitani | 2002-03-26 |
| 6355522 | Effect of doped amorphous Si thickness on better poly 1 contact resistance performance for nand type flash memory devices | Kent Kuohua Chang, Yuesong He | 2002-03-12 |
| 6350627 | Interlevel dielectric thickness monitor for complex semiconductor chips | Tho Le La, Hao Fang | 2002-02-26 |
| 6331954 | Determination of misalignment for floating gates near a gate stack bending point in array of flash memory cells | Jiang Li, Yider Wu | 2001-12-18 |
| 6323047 | Method for monitoring second gate over-etch in a semiconductor device | Kent Kuohua Chang, Hao Fang | 2001-11-27 |
| 6312991 | Elimination of poly cap easy poly 1 contact for NAND product | Hao Fang, Masaaki Higashitani | 2001-11-06 |
| 6300658 | Method for reduced gate aspect ration to improve gap-fill after spacer etch | Kent Kuohua Chang, Hao Fang, Lu You | 2001-10-09 |
| 6281078 | Manufacturing process to eliminate ONO fence material in high density NAND-type flash memory devices | Kent Kuohua Chang, Yuesong He, Ken D. Au | 2001-08-28 |
| 6211058 | Semiconductor device with multiple contact sizes | Hao Fang | 2001-04-03 |
| 6180454 | Method for forming flash memory devices | Kent Kuohua Chang, Wei-Wen Ou | 2001-01-30 |
| 6177312 | Method for removing contaminate nitrogen from the peripheral gate region of a non-volatile memory device during production of such device | Yuesong He, Toru Ishigaki, Kent Kuohua Chang, Effiong Ibok | 2001-01-23 |
| 6177316 | Post barrier metal contact implantation to minimize out diffusion for NAND device | Yue-Song He, Kent Kuohua Chang | 2001-01-23 |
| 6140246 | In-situ P doped amorphous silicon by NH3 to form oxidation resistant and finer grain floating gates | Kent Kuohua Chang, Ken D. Au | 2000-10-31 |
| 6072191 | Interlevel dielectric thickness monitor for complex semiconductor chips | Tho Le La, Hao Fang | 2000-06-06 |
| 6066873 | Method and apparatus for preventing P1 punchthrough | Yuesong He, Kent Kuohua Chang | 2000-05-23 |
| 6063668 | Poly I spacer manufacturing process to eliminate polystringers in high density nand-type flash memory devices | Yuesong He, Kent Kuohua Chang | 2000-05-16 |
| 6057193 | Elimination of poly cap for easy poly1 contact for NAND product | Hao Fang, Masaaki Higashitani | 2000-05-02 |
| 6017786 | Method for forming a low barrier height oxide layer on a silicon substrate | Yuesong He, Dae Yeong Joh | 2000-01-25 |
| 5994780 | Semiconductor device with multiple contact sizes | Hao Fang | 1999-11-30 |
| 5972749 | Method for preventing P1 punchthrough | Yuesong He, Kent Kuohua Chang | 1999-10-26 |